1N5400_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 3A, 50V - 1000V Silicon Rectifiers

CREAT BY ART
3A, 50V - 1000V Silicon Rectifiers
1N5400 - 1N5408
Taiwan Semiconductor
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 1.2 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25°C unless otherwise noted)
PARAMETER
1N 1N 1N 1N 1N 1N 1N
SYMBOL
5400 5401 5402 5404 5406 5407 5408
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
200
Rating for fusing (t<8.3ms)
I²t
166
Maximum instantaneous forward voltage (Note 1)
@3A
V_F
1.0
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
I_R
C_J
R_θJA
T_J
T_STG
5
100
50
40
- 55 to +150
- 55 to +150
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
UNIT
V
V
V
A
A
A²s
V
μA
pF
°C/W
°C
°C
Document Number: DS_D1406023
Version: G15