1N4001G_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 1A, 50V - 1000V Glass Passivated Rectifiers

CREAT BY ART
1A, 50V - 1000V Glass Passivated Rectifiers
1N4001G - 1N4007G
Taiwan Semiconductor
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight: 0.33 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
1N
1N
1N
1N
1N
1N
1N
SYMBOL
4001G 4002G 4003G 4004G 4005G 4006G 4007G
Maximum repetitive peak reverse voltage
V_RRM
50
100
200
400
600
800 1000
Maximum RMS voltage
V_RMS
35
70
140
280
420
560
700
Maximum DC blocking voltage
V_DC
50
100
200
400
600
800 1000
Maximum average forward rectified current
I_F(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
1.0
V
Maximum reverse current @ rated VR T_J=25 °C
T_J=125 °C
I_R
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
C_J
R_θJA
T_J
T_STG
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
100
10
80
- 55 to +150
- 55 to +150
μA
pF
°C/W
°C
°C
Document Number: DS_D1410021
Version: O15