BQ24765 Datasheet, PDF (9/36 Pages) Texas Instruments – SMBus-Controlled Multi-Chemistry Battery Charger With Integrated Power MOSFETs

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bq24765
SLUS999 – NOVEMBER 2009
ELECTRICAL CHARACTERISTICS (continued)
7.0 V ≤ V(DCINA) ≤ 24 V, 0°C < T_J < +125°C, typical values are at T_A = 25°C, with respect to AGND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
CHARGE UNDERCURRENT COMPARATOR (Cycle-by-Cycle Synchronous to Non-Synchronous)
V_UCP
Cycle-by-cycle Synchronous to
Non-Synchronous Transition
Threshold
Cycle-by-cycle, (CSOP-CSON) voltage, falling,
LGATE turns-off and latches off until next cycle
5
10
15
mV
LOGIC INPUT PIN CHARACTERISTICS (CE, SDA, SCL)
V_{IN_LO}
V_{IN_HI}
Input low threshold voltage
Input high threshold voltage
Pull-up CE with ≥ 2kΩ resistor, or connect directly to
VREF.
2.1
0.8
V
V
V_BIAS
Input bias current
V = 0 to 7V
OPEN-DRAIN LOGIC OUTPUT PIN CHARACTERISTICS (ACOK, ICOUT)
1
μA
V_{OUT_LO}
Output low saturation voltage
VDDSMB INPUT SUPPLY FOR SMBUS
Sink Current = 5 mA
0.5
V
V_{VDDSMB_RANGE}
V_{VDDSMB_UVLO_}
Threshold_Rising
V_{VDDSMB_UVLO_}
Hyst_Rising
I_{VDDSMB_Iq}
VDDSMB input voltage range
VDDSMB undervoltage lockout
threshold voltage, rising
VDDSMB undervoltage lockout
hysteresis voltage, falling
VDDSMB quiescent current
V_VDDSMB Rising
V_VDDSMB Falling
V_VDDSMB = SCL = SDA = 3.3 V
2.7
5.5
V
2.4
2.5
2.6
V
100
150
200
mV
20
30
μA
SMB TIMING SPECIFICATIONS
PARAMETER
t_R
t_F
t_W(H)
t_W(L)
t_SU(STA)
t_H(STA)
SCLK/SDATA rise time
SCLK/SDATA fall time
SCLK pulse width high
SCLK Pulse Width Low
Setup time for START condition
START condition hold time after which first
clock pulse is generated
t_SU(DAT)
t_H(DAT)
t_SU(STOP)
t_(BUF)
Data setup time
Data hold time
Setup time for STOP condition
Bus free time between START and STOP
condition
F_S(CL)
Clock Frequency
HOST COMMUNICATION FAILURE
t_timeout
SMBus bus release timeout
t_BOOT
Deglitch for watchdog reset signal
t_WDI
Watchdog timeout period
OUTPUT BUFFER CHARACTERISTICS
V_(SDAL) Output LO voltage at SDA, I_(SDA) = 3 mA
TEST CONDITIONS
MIN TYP MAX UNIT
1 µs
300 ns
4
50 µs
4.7
µs
4.7
µs
4
µs
250
ns
300
ns
4
µs
4.7
µs
10
100 kHz
22
25 35 ms
10
ms
140 170 200
s
0.4 V
Copyright © 2009, Texas Instruments Incorporated
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