TXS4555 Datasheet, PDF (7/16 Pages) Texas Instruments – 1.8V/3V SIM Card Power Supply With Level Translator

TXS4555
www.ti.com
SBOS550A – FEBRUARY 2011 – REVISED MARCH 2011
GENERAL ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
R_SIMPD SIM_I/O pull-down
Active pull-downs are connected to the VSIM regulator output to the
SIM_CLK, SIM_RST, SIM_I/O when EN = 0
MIN TYP MAX UNIT
3 kΩ
SWITCHING CHARACTERISTICS
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VSIM = 1.8 V or 2.95 V SUPPLIED BY INTERNAL LDO
t_rA
SIM_I/O
SIM_RST
t_rB
SIM_CLK
SIM_I/O
f_max
Duty Cycle
SIM_CLK
SIM_CLK
CL ^{= 50 pF}
V_CC = 1.8 V ± 0.15 V UNIT
MIN
MAX
40%
1 µs
1 µs
18 ns
1 us
25 MHz
60%
OPERATING CHARACTERISTICS
T_A = 25°C, V_SIM = 1.8 V
PARAMETER
C_pdA ⁽¹⁾
Class B
Class C
(1) Power dissipation capacitance per transceiver.
TEST CONDITIONS
C_L = 0, f = 5 MHz, t_r = t_f = 1 ns
Vcc TYP
1.8 V
13
11
UNIT
pF
Copyright © 2011, Texas Instruments Incorporated
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