TPS65011_15 Datasheet, PDF (7/63 Pages) Texas Instruments – Power and Battery Management IC For Li-Ion Powered Systems

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TPS65011
SLVS501B – FEBRUARY 2004 – REVISED SEPTEMBER 2015
Electrical Characteristics (continued)
V_I(MAIN) = V_I(CORE) = V_CC = V_I(LDO1) = V_I(LDO2) = 3.6 V, T_A = -40°C to 85°C, typical values are at T_A = 25°C battery charger
specifications are valid in the range 0°C <T_A <85°C unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
CONTROL SIGNALS: MPU_RESET, PWRFAIL, RESPWRON, INT, SDAT (OUTPUT)
V_OH
V_OL
t_{d(mpu_nreset)}
t_d(nrespwron)
High level output voltage
Low level output voltage
Duration of low pulse at MPU_RESET
Duration of low pulse at RESPWRON
after VMAIN is in regulation
I_IL = 10 mA
TPOR = 0
TPOR = 1
0
100
80 100
800 1000
6
V
0.3
V
µs
120
ms
1200
t_d(uvlo)
Time between UVLO going active
(PWRFAIL going low) and supplies
being disabled
1.68
2.4
3.2 ms
t_d(overtemp)
Time between chip overtemperature
condition being recognized (PWRFAIL
going low) and supplies being disabled
1.68
2.4
3.2 ms
SUPPLY PIN: VCC
I_(Q)
Operating quiescent current
I_O(SD)
Shutdown supply current
VMAIN STEP-DOWN CONVERTER
V_I = 3.6 V, current into Main + Core + V_CC
V_I = 3.6 V, BATT_COVER = GND,
Current into Main + Core + V_CC
70 µA
15
25 µA
V_I
I_O
I_O(SD)
r_DS(on)
I_lkg(p)
r_DS(on)
I_lkg(N)
I_L
f_S
Input voltage range
Maximum output current
Shutdown supply current
P-channel MOSFET on-resistance
P-channel leakage current
N-channel MOSFET on-resistance
N-channel leakage current
P-channel current limit
Oscillator frequency
2.5 V
V_O(MAIN)
Fixed output voltage
2.75 V
3.0 V
3.3 V
Line regulation
Load regulation
R_(VMAIN)
VMAIN discharge resistance
VCORE STEP-DOWN CONVERTER
BATT_COVER = GND
V_I(MAIN) = V_GS = 3.6 V
V_(DS) = 6.0 V
V_I(MAIN) = V_GS = 3.6 V
V_(DS) = 6.0 V
2.5 V< V_I(MAIN) < 6.0 V
V_I(MAIN) = 2.7 V to 6.0 V; I_O= 0 mA
V_I(MAIN) = 2.7 V to 6.0 V;
0 mA ≤ I_O≤ 1000 mA
V_I(MAIN) = 2.95 V to 6.0 V; I_O= 0 mA
V_I(MAIN) = 2.95 V to 6.0 V;
0 mA ≤ I_O≤ 1000 mA
V_I(MAIN) = 3.2 V to 6.0 V; I_O= 0 mA
V_I(MAIN) = 3.2 V to 6.0 V;
0 mA ≤ I_O≤ 1000 mA
V_I(MAIN) = 3.5 V to 6.0 V; I_O= 0 mA
V_I(MAIN) = 3.5 V to 6.0 V;
0 mA ≤ I_O≤ 1000 mA
V_I(MAIN) = V_O(MAIN) + 0.5 V (min. 2.5 V) to 6.0 V,
I_O = 10 mA
I_O = 10 mA to 1000 mA
2.5
1000
0.1
110
110
1.4 1.75
1 1.25
0%
3%
0%
3%
0%
3%
0%
3%
0.5
0.12
400
6.0
V
mA
1 µA
210 mΩ
1 µA
200 mΩ
1 µA
2.1
A
1.5 MHz
3%
3%
3%
3%
3%
3%
3%
3%
%/V
%/A
Ω
V_I
I_O
I_O(SD)
r_DS(on)
I_lkg(p)
r_DS(on)
I_lkg(N)
I_L
f_S
Input voltage range
Maximum output current
Shutdown supply current
P-channel MOSFET on-resistance
P-channel leakage current
N-channel MOSFET on-resistance
N-channel leakage current
P-channel current limit
Oscillator frequency
BATT_COVER = GND
V_I(CORE) = V_GS = 3.6 V
V_DS = 6.0 V
V_I(CORE) = V_GS = 3.6 V
V_DS = 6.0 V
2.5 V< V_I(CORE) < 6.0 V
2.5
400
0.1
275
0.1
275
0.1
600 700
1 1.25
6.0
V
mA
1 µA
530 mΩ
1 µA
500 mΩ
1 µA
900 mA
1.5 MHz
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