TLC3702_14 Datasheet, PDF (7/37 Pages) Texas Instruments – DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS

TLC3702
DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATORS
SLCS013E − NOVEMBER 1986 − REVISED MARCH 2012
PRINCIPLES OF OPERATION
LinCMOS™ process
The LinCMOS™ process is a linear polysilicon-gate CMOS process. Primarily designed for single-supply
applications, LinCMOS™ products facilitate the design of a wide range of high-performance analog functions
from operational amplifiers to complex mixed-mode converters.
While digital designers are experienced with CMOS, MOS technologies are relatively new for analog designers.
This short guide is intended to answer the most frequently asked questions related to the quality and reliability
of LinCMOS™ products. Further questions should be directed to the nearest TI field sales office.
electrostatic discharge
CMOS circuits are prone to gate oxide breakdown when exposed to high voltages even if the exposure is only
for very short periods of time. Electrostatic discharge (ESD) is one of the most common causes of damage to
CMOS devices. It can occur when a device is handled without proper consideration for environmental
electrostatic charges, e.g., during board assembly. If a circuit in which one amplifier from a dual op amp is being
used and the unused pins are left open, high voltages tend to develop. If there is no provision for ESD protection,
these voltages may eventually punch through the gate oxide and cause the device to fail. To prevent voltage
buildup, each pin is protected by internal circuitry.
Standard ESD-protection circuits safely shunt the ESD current by providing a mechanism whereby one or more
transistors break down at voltages higher than the normal operating voltages but lower than the breakdown
voltage of the input gate. This type of protection scheme is limited by leakage currents which flow through the
shunting transistors during normal operation after an ESD voltage has occurred. Although these currents are
small, on the order of tens of nanoamps, CMOS amplifiers are often specified to draw input currents as low as
tens of picoamps.
To overcome this limitation, TI design engineers developed the patented ESD-protection circuit shown in
Figure 1. This circuit can withstand several successive 2-kV ESD pulses, while reducing or eliminating leakage
currents that may be drawn through the input pins. A more detailed discussion of the operation of the TI
ESD-protection circuit is presented on the next page.
All input and output pins on LinCMOS™ and Advanced LinCMOS™ products have associated ESD-protection
circuitry that undergoes qualification testing to withstand 2000 V discharged from a 100-pF capacitor through
a 1500-Ω resistor (human body model) and 200 V from a 100-pF capacitor with no current-limiting resistor
(charged device model). These tests simulate both operator and machine handling of devices during normal
test and assembly operations.
Input
V_DD
R1
To Protect Circuit
R2
Q1
Q2
D1
D2
D3
GND
Figure 1. LinCMOS™ ESD-Protection Schematic
LinCMOS and Advanced LinCMOS are trademarks of Texas Instruments Incorporated.
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