LMH6601 Datasheet, PDF (7/37 Pages) National Semiconductor (TI) – 250 MHz, 2.4V CMOS Op Amp with Shutdown

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LMH6601, LMH6601-Q1
SNOSAK9E – JUNE 2006 – REVISED MARCH 2013
2.7V ELECTRICAL CHARACTERISTICS
Single Supply with V_S = 2.7V, A_V = +2, R_F = 604Ω, SD tied to V⁺, V_OUT = V_S/2, R_L = 150Ω to V^− unless otherwise specified.
Boldface limits apply at temperature extremes. ⁽¹⁾
Symbol
Parameter
Condition
Min ⁽²⁾
Typ ⁽²⁾ Max ⁽²⁾
Units
Frequency Domain Response
SSBW
SSBW_1
Peak
Peak_1
LSBW
Peak_2
0.1 dB BW
GBWP_1k
GBWP_150
A_VOL
PBW
–3 dB Bandwidth Small Signal
Peaking
Peaking
–3 dB Bandwidth Large Signal
Peaking
0.1 dB Bandwidth
Gain Bandwidth Product
Large Signal Open Loop Gain
Full Power BW
DG
Differential Gain
DP
Differential Phase
Time Domain Response
V_OUT = 0.25 V_PP
V_OUT = 0.25 V_PP, A_V = +1
V_OUT = 0.25 V_PP, A_V = +1
V_OUT = 0.25 V_PP
V_OUT = 2 V _PP
V_OUT = 2 V_PP
V_OUT = 2V_PP
Unity Gain, R_L = 1 kΩ to V_S/2
Unity Gain, R_L = 150Ω to V_S/2
0.25V < V_OUT < 2.5V
–1 dB, A_V = +4, V_OUT = 2 V_PP,
R_L = 150Ω to V_S/2
4.43 MHz, 0.45V ≤ V_OUT ≤ 2.05V
R_L = 150Ω to V^−
4.43 MHz, 0.45V ≤ V_OUT ≤ 2.05V
R_L = 150Ω to V^−
120
250
3.1
0.1
73
0
30
110
81
56
65
13
0.12
0.62
MHz
dB
dB
MHz
dB
MHz
MHz
dB
MHz
%
deg
TRS/TRL
Rise & Fall Time
0.25V Step
2.7
ns
OS
Overshoot
0.25V Step
10
%
SR
Slew Rate
2V Step
260
V/μs
T_S
T_{S_1}
PD
Settling Time
Propagation Delay
1V Step, ±0.1%
1V Step, ±0.02%
Input to Output, 250 mV Step, 50%
147
ns
410
3.4
ns
Distortion & Noise Performance
HD2
Harmonic Distortion (2^nd)
HD3
Harmonic Distortion (3^rd)
V_N1
Input Voltage Noise
V_N2
I_N
Input Current Noise
Static, DC Performance
1 V_PP, 10 MHz
1 V_PP, 10 MHz
>10 MHz
1 MHz
>1 MHz
−58
dBc
−60
dBc
8.4
nV/√Hz
12
50
fA/√Hz
V_IO
DV_IO
I_B
I_OS
R_IN
C_IN
+PSRR
Input Offset Voltage
Input Offset Voltage Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Input Capacitance
Positive Power Supply Rejection
Ratio
See ⁽³⁾
See ⁽⁴⁾
See ⁽⁴⁾
0V ≤ V_IN ≤ 1.2V
DC
±1
±3.5
±6.5
mV
−6.5
μV/°C
5
50
pA
2
25
pA
20
TΩ
1.6
pF
58
68
53
dB
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T_J = T_A. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where T_J > T_A.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(3) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(4) This parameter is ensured by design and/or characterization and is not tested in production.
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