LM5025B Datasheet, PDF (7/24 Pages) National Semiconductor (TI) – Active Clamp Voltage Mode PWM Controller

LM5025B
www.ti.com
SNVS354B – JULY 2005 – REVISED MARCH 2013
Electrical Characteristics⁽¹⁾ (continued)
Specifications with standard typeface are for T_J = 25°C, and those with boldface type apply over full Operating Junction
Temperature range. V_IN = 48V, V_CC = 10V, RT = 26.7kΩ, R_SET = 27.4kΩ) unless otherwise stated
Symbol
Parameter
Conditions
Min
Typ
Max
Units
UVLO Shutdown
Undervoltage Shutdown
Threshold
2.44
2.5
2.56
V
Undervoltage Shutdown
Hysteresis
16
20
24
µA
Output Section
OUT_A High Saturation MOS Device @ Iout = -10mA,
5
10
Ω
OUTPUT_A Peak Current Bipolar Device @ Vcc/2
Sink
3
A
OUT_A Low Saturation MOS Device @ Iout = 10mA,
6
9
Ω
OUTPUT_A Rise Time
OUTPUT_A Fall Time
OUT_B High Saturation
C_gate = 2.2nF
C_gate = 2.2nF
MOS Device @ Iout = -10mA,
20
ns
15
ns
10
20
Ω
OUTPUT_B Peak Current Bipolar Device @ Vcc/2
Sink
1
A
OUT_B Low Saturation MOS Device @ Iout = 10mA,
12
18
Ω
OUTPUT_B Rise Time
OUTPUT_B Fall Time
Output Timing Control
C_gate = 1nF
C_gate = 1nF
20
ns
15
ns
Overlap Time
R_SET = 38 kΩ connected to
75
GND, 50% to 50% transitions
105
135
ns
Deadtime
R_SET = 29.5 kΩ connected to
75
REF, 50% to 50% transitions
105
135
ns
Thermal Shutdown
T_SD
Thermal Shutdown
Threshold
165
°C
Thermal Shutdown
Hysteresis
25
°C
Thermal Resistance
θ_JA
Junction to Ambient
PW Package
NHQ Package
125
°C/W
32
°C/W
θ_JC
Junction to Case
PW Package
NHQ Package
30
°C/W
5
°C/W
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