LM3S1166 Datasheet, PDF (603/650 Pages) Texas Instruments – ARM and Thumb are registered trademarks and Cortex is a trademark

OBSOLETE: TI has discontinued production of this device.
Stellaris^® LM3S1166 Microcontroller
20.1.3
20.1.4
20.1.5
Table 20-2. Recommended DC Operating Conditions (continued)
Parameter Parameter Name
Min
V_OHa
High-level output voltage
2.4
V_OLa
Low-level output voltage
-
High-level source current, V_OH=2.4 V
2-mA Drive
2.0
I_OH
4-mA Drive
4.0
8-mA Drive
8.0
Low-level sink current, V_OL=0.4 V
2-mA Drive
2.0
I_OL
4-mA Drive
4.0
8-mA Drive
8.0
a. V_OL and V_OH shift to 1.2 V when using high-current GPIOs.
Nom
Max
-
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
On-Chip Low Drop-Out (LDO) Regulator Characteristics
Unit
V
V
mA
mA
mA
mA
mA
mA
Table 20-3. LDO Regulator Characteristics
Parameter Parameter Name
Min
Nom
Max
Unit
Programmable internal (logic) power supply
2.25
2.5
2.75
V
V_LDOOUT
output value
Output voltage accuracy
-
2%
-
%
t_PON
Power-on time
-
-
100
µs
t_ON
Time on
-
-
200
µs
t_OFF
Time off
-
-
100
µs
V_STEP
Step programming incremental voltage
-
50
-
mV
C_LDO
External filter capacitor size for internal power
1.0
-
3.0
µF
supply
GPIO Module Characteristics
Table 20-4. GPIO Module DC Characteristics
Parameter
Parameter Name
Min
Nom
Max
Unit
R_GPIOPU
GPIO internal pull-up resistor
50
-
110
kΩ
R_GPIOPD
I_LKG
GPIO internal pull-down resistor
GPIO input leakage current^a
55
-
180
kΩ
-
-
2
µA
a. The leakage current is measured with GND or V_DD applied to the corresponding pin(s). The leakage of digital port pins is
measured individually. The port pin is configured as an input and the pullup/pulldown resistor is disabled.
Power Specifications
The power measurements specified in the tables that follow are run on the core processor using
SRAM with the following specifications (except as noted):
■ V_DD = 3.3 V
■ V_DD25 = 2.50 V
July 24, 2012
603
Texas Instruments-Production Data