TPS25810-Q1 Datasheet, PDF (6/37 Pages) Texas Instruments – USB Type-C DFP Controller and Power Switch With Load Detection

TPS25810-Q1
SLVSD95 – NOVEMBER 2016
www.ti.com
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
TPS25810-Q1
RVC (WQFN)
UNIT
20 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
39.3
°C/W
43.4
°C/W
13
°C/W
0.7
°C/W
13
°C/W
4.2
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
–40°C ≤ T_J ≤ 125°C, 4.5 V ≤ V_IN1 ≤ 6.5 V, 4.5 V ≤ V_IN2 ≤ 5.5 V, 2.9 V ≤ V_AUX ≤ 5.5 V; V_EN = V_CHG = V_{CHG_HI} = V_AUX, R_REF =
100 kΩ. Typical values are at 25°C. All voltages are with respect to GND. I_OUT and I_OS defined positive out of the indicated pin
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
OUT – POWER SWITCH
r_DS(on)
On-resistance ⁽¹⁾
I_REV
OUT to IN reverse leakage current
OUT – CURRENT LIMIT
T_J = 25°C, I_OUT = 3 A
–40°C ≤ T_J ≤ 85°C, I_OUT = 3 A
–40°C ≤ T_J ≤ 125°C, I_OUT = 3 A
V_OUT = 6.5 V, V_IN1 = V_EN = 0 V,
–40°C ≤ T_J ≤ 85°C,
I_REV is current out of IN1 pin
34
37
34
46 mΩ
34
55
0
3 µA
V_CHG = 0 V or V_CHG = V_AUX and V_{CHG_HI} =
0V
1.58
1.7 1.82
I_OS
Short circuit current limit ⁽¹⁾
3.16
3.4 3.64
A
R_REF = 10 Ω
7
OUT – DISCHARGE
REF
Discharge resistance
Bleed discharge resistance
V_OUT = 4 V, UFP signature removed from
CC lines, time < t_{w_DCHG}
V_OUT = 4 V, No UFP signature on CC lines,
time > t_{w_DCHG}
400
500
600
Ω
100
150
250
kΩ
V_O
I_OS
FAULT
Output voltage
Short circuit current
R_REF = 10 Ω
0.78
0.8 0.82
V
9.5
15.3 µA
V_OL
I_OFF
LD_DET
Output low voltage
Off-state leakage
I_FAULT = 1 mA
V_FAULT = 5.5 V
350 mV
1 µA
V_OL
Output low voltage
I_{LD_DET} = 1 mA
I_OFF
Off-state leakage
V_{LD_DET} = 5.5 V
I_TH
OUT sourcing, rising threshold
current for load detect
Hysteresis ⁽²⁾
1.8 1.95
125
350 mV
1 µA
2.1
A
mA
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
(2) These parameters are provided for reference only and do not constitute part of TI’s published specifications for purposes of TI’s product
warranty.
6
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