TPIC5404 Datasheet, PDF (6/15 Pages) Texas Instruments – H-BRIDGE POWER DMOS ARRAY

TPIC5404
HĆBRIDGE POWER DMOS ARRAY
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SLIS023B − MARCH 1994 − REVISED SEPTEMBER 1995
PARAMETER MEASUREMENT INFORMATION
VDD = 25 V
245 µH
tav
tw
Pulse Generator
(see Note A)
50 Ω
ID
VGS
VDS
DUT
VGS
ID
Rgen
50 Ω
VDS
ą
15 V
0V
IAS
(see Note B)
0V
V(BR)DSX = 60 V Min
TEST CIRCUIT
0V
VOLTAGE AND CURRENT WAVEFORMS
NOTES: A. The pulse generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω.
B. Input pulse duration (tw) is increased until peak current IAS = 10 A, where tav = avalanche time.
Energy test level is defined as EAS + ^IAS
V(BR)DSX
2
tav
+ 21 mJ
Figure 4. Single-Pulse Avalanche-Energy Test Circuit and Waveforms
TYPICAL CHARACTERISTICS
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
2.5
2
ID = 1 mA
1.5
ID = 100 µA
1
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
0.5
ID = 2 A
VGS = 10 V
0.4
0.3
VGS = 15 V
0.2
0.5
0.1
0
− 40 − 20
0 20 40 60 80 100 120 140 160
TJ − Junction Temperature − °C
Figure 5
0
− 40 − 20
0 20 40 60 80 100 120 140 160
TJ − Junction Temperature − °C
Figure 6
2−6
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