MSP430 Datasheet, PDF (6/21 Pages) Texas Instruments – ULTRA-LOW-POWER MICROCONTROLLERS

6 Ultra-Low-Power MSP430^™ Microcontrollers
What’s New with MSP430^™ Microcontrollers?
FRAM: The future of embedded memory
FRAM, or Ferroelectric Random Access Memory, is a type of non-
volatile memory that combines the speed, ultra-low power, en-
durance, and flexibility of SRAM with the reliability and stability
of flash to combine program and data into one unified memory
space for the lowest power and easiest to use microcontroller
architecture. www.ti.com/fram
Benefits of Embedded FRAM
Lowest Power
• Industry leading active power consumption
of <100µA/MHz
• 250x less power than Flash writes
• Protected write completion
Power Consumption (µA)
2200
Flash/EEPROM
FRAM
720
Flash/EEPROM
FRAM
True unified memory
FRAM is the only unified memory in microcontrollers today, that
gives developers the flexibility to designate any section of memory
as program or data memory. This can be changed throughout the
development process to suit the changing needs of the application.
This feature allows faster time to market and simplified inventory
management – one single device can be configured into nearly
unlimited memory configurations.
Data
Program
OR
Data
Program
Up to 16kB of unified FRAM
Reconfigurable as program or data memory
www.ti.com/msp430 Ultra-Low Power is in our DNA
Industry-leading speed
In addition to lower power performance, FRAM can also maintain
unmatched data throughput for non-volatile data storage.
MSP430 MCUs with embedded FRAM are capable of speeds
up to 2 Megabytes/second ensuring that memory is no longer
the bottleneck of your application.
2500
Write Speed
2000
15 MBps
1500
1000
FRAM
Flash
500
0
FRAM
12 kBps
Flash
FRAM can write more than 100x faster than flash, while
consuming less power!
• FRAM max throughput = 2000kB/s
• Flash max throughput = 12kB/s
Virtually unlimited write endurance
Embedded FRAM also offers longevity and endurance that existing
memory technologies cannot match. This increased write endur-
ance is particularly ideal for data logging, digital rights management,
replacing battery-backed SRAM and other applications.
• 10¹⁵ write cycles for FRAM
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
1E+03
1E+02
1E+01
1E+00
Endurance (writes)
1E+15
FRAM
Flash/EEPROM
100000
FRAM
Flash/EEPROM