DRV8842 Datasheet, PDF (6/18 Pages) Texas Instruments – DC MOTOR DRIVER IC

DRV8842
SLVSAB8D – MAY 2010 – REVISED JANUARY 2012
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
POWER SUPPLIES
I_VM
VM operating supply current
I_VMQ
VM sleep mode supply current
V_UVLO
VM undervoltage lockout voltage
V3P3OUT REGULATOR
V_M = 24 V, f_PWM < 50 kHz
V_M = 24 V
V_M rising
V_3P3
V3P3OUT voltage
LOGIC-LEVEL INPUTS
IOUT = 0 to 1 mA
V_IL
Input low voltage
V_IH
Input high voltage
V_HYS
Input hysteresis
I_IL
Input low current
I_IH
Input high current
R_PD
Internal pulldown resistance
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VIN = 0
VIN = 3.3 V
V_OL
Output low voltage
I_OH
Output high leakage current
DECAY INPUT
I_O = 5 mA
V_O = 3.3 V
V_IL
Input low threshold voltage
V_IH
Input high threshold voltage
I_IN
Input current
R_PU
Internal pullup resistance (to 3.3 V)
R_PD
Internal pulldown resistance
H-BRIDGE FETS
For slow decay (brake) mode
For fast decay (coast) mode
R_DS(ON) HS FET on resistance
R_DS(ON) LS FET on resistance
I_OFF
Off-state leakage current
MOTOR DRIVER
V_M = 24 V, I_O = 1 A, T_J = 25°C
V_M = 24 V, I_O = 1 A, T_J = 85°C
V_M = 24 V, I_O = 1 A, T_J = 25°C
V_M = 24 V, I_O = 1 A, T_J = 85°C
f_PWM
Internal current control PWM frequency
t_BLANK
Current sense blanking time
t_R
Rise time
t_F
Fall time
PROTECTION CIRCUITS
I_OCP
Overcurrent protection trip level
t_TSD
Thermal shutdown temperature
CURRENT CONTROL
Die temperature
I_REF
V_TRIP
VREF input current
ISENSE trip voltage
VREF = 3.3 V
VREF = 3.3 V, 100% current setting
VREF = 3.3 V, 5% current setting
ΔI_TRIP
Current trip accuracy
(relative to programmed value)
VREF = 3.3 V, 10% - 34% current setting
VREF = 3.3 V, 38% - 67% current setting
VREF = 3.3 V, 71% - 100% current setting
A_ISENSE Current sense amplifier gain
Reference only
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MIN TYP MAX UNIT
5
8 mA
10
20 μA
7.8 8.2 V
3.2
3.3 3.4 V
0.6 0.7 V
2.2
5.25 V
0.3 0.45 0.6 V
–20
20 μA
33 100 μA
100
kΩ
0.5 V
1 μA
0
0.8 V
2
V
±40 μA
130
kΩ
80
kΩ
0.1
Ω
0.13 0.16
0.1
Ω
0.13 0.16
–40
40 μA
50
kHz
3.75
μs
30
200 ns
30
200 ns
6
A
150
160 180 °C
–3
3 μA
635
660 685 mV
–25
25
–15
15
%
–10
10
–5
5
5
V/V
6
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