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BQ27531-G1_16 Datasheet, PDF (6/34 Pages) Texas Instruments – Battery Management Unit Impedance Track Fuel Gauge
bq27531-G1
SLUSBE7C – MARCH 2013 – REVISED JANUARY 2016
www.ti.com
7.10 ADC (Temperature and Cell Measurement) Characteristics
TA = –40°C to 85°C, 2.4 V < VCC < 2.6 V; typical values at TA = 25°C and VCC = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
VADC1
Input voltage (TS)
VSS –
2
0.125
VADC2
Input voltage (BAT)
VSS –
5
0.125
VIN(ADC)
GTEMP
Input voltage
Internal temperature sensor voltage
gain
0.05
1
–2
tADC_CONV
Conversion time
Resolution
125
14
15
VOS(ADC)
ZADC1 (1)
ZADC2 (1)
Ilkg(ADC) (1)
Input offset
Effective input resistance (TS)
Effective input resistance (BAT)
Input leakage current
bq27531-G1 not measuring cell voltage
bq27531-G1 measuring cell voltage
1
8
8
100
0.3
(1) Specified by design. Not tested in production.
UNIT
V
V
V
mV/°C
ms
bits
mV
MΩ
MΩ
kΩ
μA
7.11 Integrating ADC (Coulomb Counter) Characteristics
TA = –40°C to 85°C, 2.4 V < VCC < 2.6 V; typical values at TA = 25°C and VCC = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
VSR
tSR_CONV
Input voltage,
V(SRP) and V(SRN)
Conversion time
Resolution
VSR = V(SRP) – V(SRN)
Single conversion
–0.125
14
0.125
1
15
VOS(SR)
INL
ZIN(SR) (1)
Ilkg(SR) (1)
Input offset
Integral nonlinearity error
Effective input resistance
Input leakage current
10
±0.007% ±0.034%
2.5
0.3
(1) Specified by design. Not tested in production.
UNIT
V
s
bits
μV
FSR
MΩ
μA
7.12 Data Flash Memory Characteristics
TA = –40°C to 85°C, 2.4 V < VCC < 2.6 V; typical values at TA = 25°C and VCC = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
tDR (1)
Data retention
10
Flash-programming write
cycles (1)
20000
tWORDPROG (1)
ICCPROG (1)
tDFERASE (1)
Word programming time
Flash-write supply current
Data flash master erase time
2
5
10
200
tIFERASE (1)
Instruction flash master erase
time
200
tPGERASE (1)
Flash page erase time
20
(1) Specified by design. Not production tested.
UNIT
Years
Cycles
ms
mA
ms
ms
ms
6
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