OPA1652 Datasheet, PDF (5/28 Pages) Texas Instruments – Low Noise and Distortion, General-Purpose, FET-Input

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100
OPA1652
OPA1654
SBOS477 – DECEMBER 2011
TYPICAL CHARACTERISTICS
At T_A = +25°C, V_S = ±15 V, and R_L = 2 kΩ, unless otherwise noted.
INPUT VOLTAGE NOISE DENSITY
vs FREQUENCY
0.1Hz TO 10Hz NOISE
10
1
1
10
100
1k
10k
100k
Frequency (Hz)
G001
Figure 1.
VOLTAGE NOISE vs SOURCE RESISTANCE
10k
E_o² = e_n² + (i_nR_S)² + 4KTR_S
1k
R_S
E_O
OPA166x
100
OPA165x
10
1
100
Resistor Noise
1k
10k
100k
Source Resistance (W)
Figure 3.
1M
G003
GAIN AND PHASE vs FREQUENCY
140
180
Gain
120
Phase
100
135
80
60
90
40
20
45
0
C_L = 10 pF
−20
10 100 1k
0
10k 100k 1M 10M 100M
Frequency (Hz)
G005
Figure 5.
Time (1 s/div)
G002
Figure 2.
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
20
18
V_S = ± 15 V
15
12
10
8
5
V_S = ± 2.25 V
2
0
10k
100k
1M
Frequency (Hz)
Figure 4.
10M
G004
CLOSED-LOOP GAIN vs FREQUENCY
40
Gain = −1 V/V
Gain = +1 V/V
Gain = +10 V/V
20
0
C_L = 10 pF
−20
100k
1M
10M
Frequency (Hz)
Figure 6.
100M
G006
Copyright © 2011, Texas Instruments Incorporated
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