CSD25484F4 Datasheet, PDF (5/15 Pages) Texas Instruments – 20 V P-Channel FemtoFET MOSFET

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Typical MOSFET Characteristics (continued)
(T_A = 25°C unless otherwise stated)
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Q_g - Gate Charge (nC)
D004
I_D = –0.5 A
V_DS = –10 V
Figure 4. Gate Charge
1.25
1.15
1.05
0.95
0.85
0.75
0.65
0.55
-75 -50 -25 0 25 50 75 100 125 150 175
T_C - Case Temperature (GC)
D006
I_D = –250 µA
Figure 6. Threshold Voltage vs Temperature
1.4
V_GS = -2.5 V
1.3
V_GS = -8.0 V
1.2
1.1
1
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150 175
T_C - Case Temperature (GC)
D008
I_D = –0.5 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD25484F4
SLPS551 – MAY 2015
5000
1000
C_iss = C_gd + C_gs
C_oss = C_ds + C_gd
C_rss = C_gd
100
10
1
0 2 4 6 8 10 12 14 16 18 20
-V_DS - Drain-to-Source Voltage (V)
D005
250
225
200
175
150
125
100
75
50
25
0
0
Figure 5. Capacitance
T_C = 25°C, I _D = -0.5 A
T_C = 125°C, I _D = -0.5 A
2
4
6
8
10
-V_GS - Gate-To-Source Voltage (V)
12
D007
Figure 7. On-State Resistance vs Gate-to-Source Voltage
10
T_C = 25GC
T_C = 125GC
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
-V_SD - Source-To-Drain Voltage (V)
D009
Figure 9. Typical Diode Forward Voltage
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