CSD25402Q3A_16 Datasheet, PDF (5/15 Pages) Texas Instruments – 20 V P-Channel NexFET Power MOSFET

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Typical MOSFET Characteristics (continued)
(T_A = 25°C unless otherwise stated)
100
90
80
V_GS = -1.8 V
V_GS = -2.5 V
V_GS = -4.5 V
70
60
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
-V_DS - Drain-to-Source Voltage (V)
D002
Figure 2. Saturation Characteristics
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
Q_g - Gate Charge (nC)
D004
I_D = –10 A
V_DS = –10 V
Figure 4. Gate Charge
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
T_C - Case Temperature (qC)
D006
I_D = –250 µA
Figure 6. Threshold Voltage vs Temperature
CSD25402Q3A
SLPS454B – DECEMBER 2013 – REVISED JANUARY 2016
100
90
T_C = 125° C
T_C = 25° C
80
T_C = -55° C
70
60
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4
-V_GS - Gate-To-Source Voltage (V)
D003
V_DS = –5 V
10000
Figure 3. Transfer Characteristics
1000
100
C_iss = C_gd + C_gs
C_oss = C_ds + C_gd
C_rss = C_gd
10
0 2 4 6 8 10 12 14 16 18 20
-V_DS - Drain-to-Source Voltage (V)
D005
Figure 5. Capacitance
24
T_C = 25°C, I _D = -10 A
21
T_C = 125°C, I _D = -10 A
18
15
12
9
6
3
0
0
2
4
6
8
10
12
-V_GS - Gate-To-Source Voltage (V)
D007
Figure 7. On-State Resistance vs Gate-to-Source Voltage
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