TPS2836_15 Datasheet, PDF (4/17 Pages) Texas Instruments – SYNCHRONOUS-BUCK MOSFET DRIVER WITH DEAD-TIME CONTROL

TPS2836, TPS2837
SYNCHRONOUSĆBUCK MOSFET DRIVER
WITH DEADĆTIME CONTROL
SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
electrical characteristics over recommended operating virtual junction temperature range,
V_CC = 6.5 V, C_L = 3.3 nF (unless otherwise noted)
supply current
VCC
PARAMETER
Supply voltage range
Quiescent current
Quiescent current
Quiescent current
NOTE 2: Ensured by design, not production tested.
TEST CONDITIONS
VCC =15 V,
VCC =15 V,
VCC =12 V,
fSWX = 200 kHz,
CHIGHDR = 50 pF,
V(ENABLE) = LOW
V(ENABLE) = HIGH
BOOTLO grounded,
CLOWDR = 50 pF,
See Note 2
MIN TYP MAX UNIT
4.5
15 V
100
µA
300 400
3
mA
output drivers
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
High-side sink
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 5 V
VBOOT – VBOOTLO = 12 V, VHIGHDR = 10.5 V
0.7
1.1
2
1.1
1.5
2.4
A
High-side
Duty cycle < 2%, ^{VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5V}
1.2 1.4
source
tpw < 100 µs
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 1.5 V
1.3 1.6
A
Peak output- ^{(see Note 4)}
(see Note 3)
VBOOT – VBOOTLO = 12 V, VHIGHDR = 1.5 V
2.3 2.7
current
Low-side sink
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VCC = 4.5 V,
VCC = 6.5 V,
VCC = 12 V,
VLOWDR = 4 V
1.3 1.8
VLOWDR = 5 V
2 2.5
A
VLOWDR = 10.5 V
3 3.5
Low-side
source
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VCC = 4.5 V,
VCC = 6.5 V,
VCC = 12 V,
VLOWDR = 0.5V
1.4 1.7
VLOWDR = 1.5 V
2 2.4
A
VLOWDR = 1.5 V
2.5
3
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5 V
5
High-side sink (see Note 4)
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 0.5 V
5Ω
VBOOT – VBOOTLO = 12 V, VHIGHDR = 0.5 V
5
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V
75
High-side source (see Note 4)
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 6 V
75 Ω
Output
resistance
VBOOT – VBOOTLO = 12 V, VHIGHDR =11.5 V
75
VDRV = 4.5 V,
VLOWDR = 0.5 V
9
Low-side sink (see Note 4)
VDRV = 6.5 V
VLOWDR = 0.5 V
7.5 Ω
VDRV = 12 V,
VLOWDR = 0.5 V
6
VDRV = 4.5 V,
VLOWDR = 4 V
75
Low-side source (see Note 4)
VDRV = 6.5 V,
VLOWDR = 6 V
75 Ω
VDRV = 12 V,
VLOWDR = 11.5 V
75
NOTES: 3. Ensured by design, not production tested.
4. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
4
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