TPS2372 Datasheet, PDF (4/43 Pages) Texas Instruments – High-Power PoE PD Interface with Automatic MPS and Autoclass

TPS2372
SLUSCM4 – OCTOBER 2017
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over recommended T_J range; voltages with respect to V_VSS (unless otherwise noted)⁽¹⁾
Input voltage
Output voltage
Voltage
Sinking current
Sourcing current
T_J(max)
T_stg
VDD, DEN
RTN ⁽²⁾
IRSHDL_EN to RTN
AUTCLS
CLSA, CLSB, REF, MPS_DUTY⁽³⁾
AMPS_CTL ⁽³⁾
PG to RTN
TPH, TPL, BT to RTN
RTN ⁽⁴⁾
PG, TPH, TPL, BT
DEN
CLSA, CLSB
REF
AMPS_CTL
Maximum junction temperature
Storage temperature
MIN
MAX
–0.3
100
–0.6
100
–0.3
6.5
–0.3
6.5
–0.3
6.5
–0.3
30
–0.3
100
–0.3
100
Internally limited
10
1
65
Internally limited
50
Internally limited
–65
150
UNIT
V
V
V
mA
mA
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) With I_(RTN) = 0
(3) Do not apply voltages to these pins
(4) SOA limited to RTN = 80 V at 2.5 A.
6.2 ESD Ratings
V_(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins ⁽²⁾
IEC 61000-4-2 contact discharge⁽³⁾
IEC 61000-4-2 air-gap discharge⁽³⁾
VALUE
±2000
±500
±8000
±15000
UNIT
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Discharges applied to circuit of Figure 22 between RJ-45, adapter, and output voltage rails, on TPS2372- 4EVM-006 Evaluation Module.
4
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