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TL082-N Datasheet, PDF (4/16 Pages) Texas Instruments – TL082 Wide Bandwidth Dual JFET Input Operational Amplifier | |||
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AC Electrical Characteristics (Note 5)
Symbol
Parameter
Conditions
SR
GBW
en
in
THD
Amplifier to Amplifier Coupling
Slew Rate
Gain Bandwidth Product
Equivalent Input Noise Voltage
Equivalent Input Noise Current
Total Harmonic Distortion
TA = 25ËC, f = 1Hz-
20 kHz (Input Referred)
VS = ±15V, TA = 25ËC
VS = ±15V, TA = 25ËC
TA = 25ËC, RS = 100â¦,
f = 1000 Hz
Tj = 25ËC, f = 1000 Hz
AV = +10, RL = 10k,
VO = 20 Vp â p,
BW = 20 Hzâ20 kHz
TL082C
Min
Typ
Max
â120
8
13
4
25
0.01
<0.02
Units
dB
V/µs
MHz
nV/âHz
pA/âHz
%
Note 2: For operating at elevated temperature, the device must be derated based on a thermal resistance of 115ËC/W junction to ambient for the N package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for VS = ±15V and 0ËC â¤TA ⤠+70ËC. VOS, IB and IOS are measured at VCM = 0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10ËC increase in the junction temperature, Tj. Due to the limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, PD. Tj = TA + θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. VS
= ±6V to ±15V.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
00835718
00835719
3
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