LMV851_14 Datasheet, PDF (4/30 Pages) Texas Instruments – LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers

LMV851, LMV852, LMV854
SNOSAW1 – OCTOBER 2007
www.ti.com
3.3V Electrical Characteristics ⁽¹⁾ (continued)
Unless otherwise specified, all limits are guaranteed for T_A = 25°C, V⁺ = 3.3V, V^− = 0V, V_CM = V⁺/2, and R_L = 10 kΩ to V⁺/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(2)
(3)
(2)
V_O
Output Swing High,
(measured from V⁺)
Output Swing Low,
(measured from V^−)
R_L = 2 kΩ to V⁺/2
R_L = 10 kΩ to V⁺/2
R_L = 2 kΩ to V⁺/2
R_L = 10 kΩ to V⁺/2
31
35
43
mV
7
10
12
26
32
43
mV
6
11
14
I_O
Output Short Circuit Current
I_S
Supply Current
Sourcing, V_OUT = V_CM,
V_IN = 100 mV
Sinking, V_OUT = V_CM,
V_IN = −100 mV
LMV851
25
28
20
mA
28
31
20
0.42
0.50
0.58
LMV852
0.79
0.90
1.06
mA
SR
GBW
Slew Rate ⁽⁸⁾
Gain Bandwidth Product
LMV854
A_V = +1, V_OUT = 1 V_PP, 10% to 90%
1.54
1.67
1.99
4.5
V/μs
8
MHz
Φ_m
Phase Margin
e_n
Input-Referred Voltage Noise
f = 1 kHz
f = 10 kHz
62
deg
11
nV/
10
i_n
R_OUT
C_IN
Input-Referred Current Noise
Closed Loop Output Impedance
Common-Mode Input Capacitance
Differential-Mode Input Capacitance
f = 1 kHz
f = 6 MHz
0.005
400
11
6
pA/
Ω
pF
THD+N Total Harmonic Distortion + Noise
f = 1 kHz, A_V = 1, BW = >500 kHz
0.006
%
(8) Number specified is the slower of positive and negative slew rates.
4
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