LME49870 Datasheet, PDF (4/35 Pages) National Semiconductor (TI) – 44V Single High Performance, High Fidelity Audio Operational Amplifier

LME49870
SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
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ELECTRICAL CHARACTERISTICS FOR THE LME49870⁽¹⁾
The following specifications apply for V_S = ±18V and ±22V, R_L = 2kΩ, R_SOURCE = 10Ω, f_IN = 1kHz, T_A = 25°C, unless otherwise
specified.
Symbol
Parameter
Conditions
LME49870
Typical ⁽²⁾
Limit ⁽³⁾
Units
(Limits)
THD+N
IMD
Total Harmonic Distortion + Noise
Intermodulation Distortion
A_V = 1, V_OUT = 3V_rms
R_L = 2kΩ
R_L = 600Ω
A_V = 1, V_OUT = 3V_RMS
Two-tone, 60Hz & 7kHz 4:1
0.00003
0.00003
0.00005
0.00009
% (max)
%
GBWP
Gain Bandwidth Product
55
45
MHz (min)
SR
Slew Rate
±20
±15
V/μs (min)
FPBW
Full Power Bandwidth
V_OUT = 1V_P-P, –3dB
referenced to output magnitude
10
at f = 1kHz
MHz
t_s
Settling time
A_V = –1, 10V step, C_L = 100pF
0.1% error range
1.2
μs
Equivalent Input Noise Voltage
f_BW = 20Hz to 20kHz
e_n
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
0.34
0.65
μV_RMS
(max)
2.5
4.7
nV/√Hz
6.4
(max)
i_n
Current Noise Density
f = 1kHz
f = 10Hz
1.6
3.1
pA/√Hz
V_OS
ΔV_OS/ΔTemp
PSRR
I_B
ΔI_OS/ΔTemp
Offset Voltage
Average Input Offset Voltage Drift vs
Temperature
Average Input Offset Voltage Shift vs
Power Supply Voltage
Input Bias Current
Input Bias Current Drift vs
Temperature
V_S = ±18V
V_S = ±22V
–40°C ≤ T_A ≤ 85°C
V_S = ±18V, ΔV_S = 24V ⁽⁴⁾
V_S = ±22V, ΔV_S = 30V
V_CM = 0V
–40°C ≤ T_A ≤ 85°C
±0.12
±0.14
0.1
120
120
10
0.2
mV (max)
±0.7
mV (max)
μV/°C
110
dB (min)
72
nA (max)
nA/°C
I_OS
V_IN-CM
Input Offset Current
V_CM = 0V
Common-Mode Input Voltage Range
V_S = ±18V
V_S = ±22V
11
+17.1
–16.9
+21.0
–20.8
65
(V+) – 2.0
(V-) + 2.0
nA (max)
V (min)
V (min)
V (min)
V (min)
CMRR
Z_IN
Common-Mode Rejection
Differential Input Impedance
Common Mode Input Impedance
V_S = ±18V, –12V≤Vcm≤12V
V_S = ±22V, –15V≤Vcm≤15V
–10V<Vcm<10V
120
120
30
1000
dB (min)
110
dB (min)
kΩ
MΩ
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Typical values represent most likely parametric norms at T_A = +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
(3) Datasheet min/max specification limits are specified by test or statistical analysis.
(4) PSRR is measured as follows: For V_S, V_OS is measured at two supply voltages, ±7V and ±22V, PSRR = |20log(ΔV_OS/ΔV_S)|.
4
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