LM3556_15 Datasheet, PDF (4/39 Pages) Texas Instruments – Synchronous Boost LED Flash Driver With High-Side Current Source

LM3556
SNVS796D – AUGUST 2011 – REVISED OCTOBER 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)^{(1) (2)}
V_IN, V_SW ,V_OUT
V_SCL, V_SDA, V_ENABLE, V_STROBE, V_TX, V_TORCH, V_LED, V_TEMP
Continuous power dissipation⁽³⁾
Junction temperature, T_J-MAX
Maximum lead temperature (soldering)
Storage temperature, T_stg
MIN
MAX
–0.3
6
−0.3 V to the lesser of (V_IN + 0.3 V)
w/ 6 V maximum
Internally limited
150
See ⁽⁴⁾
–65
150
UNIT
V
°C
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pin.
(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T_J = 150°C (typical) and
disengages at T_J = 135°C (typical). Thermal shutdown is ensured by design.
(4) For detailed soldering specifications and information, refer to Texas Instruments Application Note 1112: DSBGA Wafer Level chip Scale
Package (SNVA009).
6.2 ESD Ratings
V_(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾
Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾
VALUE
±1000
±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾
V_IN
Junction temperature, T_J
Ambient temperature, T_A(2)
MIN
NOM
MAX UNIT
2.5
5.5
V
−40
125
°C
−40
85
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (T_A-MAX) is dependent on the maximum operating junction temperature (T_J-MAX-OP =
125°C), the maximum power dissipation of the device in the application (P_D-MAX), and the junction-to-ambient thermal resistance of the
part/package in the application (R_θJA), as given by the following equation: T_A-MAX = T_J-MAX-OP – (R_θJA × P_D-MAX).
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
LM3556
YFQ (DSBGA)
UNIT
R_θJA ⁽²⁾
Junction-to-ambient thermal resistance
16 PINS
60
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2) Junction-to-ambient thermal resistance (R_θJA) is taken from a thermal modeling result, performed under the conditions and guidelines
set forth in the JEDEC standard JESD51-7. The test board is a 4-layer FR-4 board measuring 102 mm × 76 mm × 1.6 mm with a 2 × 1
array of thermal vias. The ground plane on the board is 50 mm × 50 mm. Thickness of copper layers are 36 µm/18 µm/18 µm/36 µm
(1.5 oz/1 oz/1 oz/1.5 oz). Ambient temperature in simulation is 22°C, still air. Power dissipation is 1 W.
4
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