LF353 Datasheet, PDF (4/16 Pages) Texas Instruments – JFET-INPUT DUAL OPERATIONAL AMPLIFIER

AC Electrical Characteristics (Continued)
(Note 5)
Symbol
Parameter
Conditions
THD
Total Harmonic Distortion
A_V=+10, RL=10k,
V_O=20Vp−p,
BW=20 Hz-20 kHz
LF353
Min
Typ
Max
<0.02
Units
%
Note 2: For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115˚C/W typ junction to ambient for the N package,
and 158˚C/W typ junction to ambient for the H package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for V_S=±15V and 0˚C≤T_A≤+70˚C. V_OS, I_Band I_OS are measured at V_CM=0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T_j. Due to the limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P_D. T_j=T_A+θ_jA P_D where θ_jA is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. V_S
= ±6V to ±15V.
Note 8: Human body model, 1.5 kΩ in series with 100 pF.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
Supply Current
00564918
00564919
Positive Common-Mode Input Voltage Limit
00564920
3
00564921
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