INA129UA Datasheet, PDF (4/20 Pages) Texas Instruments – Precision, Low Power INSTRUMENTATION AMPLIFIERS

INA128
INA129
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
ELECTRICAL CHARACTERISTICS (continued)
At T_A = +25°C, V_S = ±15V, R_L = 10kΩ, unless otherwise noted.
INA128P, U
INA129P. U
PARAMETER
CONDITIONS
MIN
TYP
MAX
OUTPUT
Voltage: Positive
Voltage: Negative
Load Capacitance Stability
R_L = 10kΩ
R_L = 10kΩ
(V+) − 1.4
(V−) + 1.4
(V+) − 0.9
(V−) + 0.8
1000
Short-Circuit Current
+6/−15
FREQUENCY RESPONSE
Bandwidth, −3dB
G=1
1.3
G = 10
700
G = 100
200
G = 1000
20
Slew Rate
V_O = ±10V, G = 10
4
Settling Time, 0.01%
G=1
7
G = 10
7
G = 100
9
G = 1000
80
Overload Recovery
50% Overdrive
4
POWER SUPPLY
Voltage Range
±2.25
±15
±18
Current, Total
TEMPERATURE RANGE
V_IN = 0V
±700
±750
Specification
−40
+85
Operating
−40
+125
q_JA
8-Pin DIP
80
SO-8 SOIC
150
NOTE: ∗ Specification is same as INA128P, U or INA129P, U.
(1) _{Input common-mode range varies with output voltage — see typical curves.}
(2) _{Specified by wafer test.}
(3) _{Temperature coefficient of the 50kΩ (or 49.4kΩ) term in the gain equation.}
(4) _{Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.}
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INA128PA, UA
INA129PA, UA
MIN
TYP
MAX
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∗
∗
∗
∗
∗
∗
∗
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∗
∗
∗
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∗
∗
∗
∗
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UNIT
V
V
pF
mA
MHz
kHz
kHz
kHz
V/µs
µs
µs
µs
µs
µs
V
µA
°C
°C
°C/W
°C/W
4