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| CSD25404Q3 Datasheet, PDF (4/13 Pages) Texas Instruments – 20 V P-Channel NexFET Power MOSFET | |||
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CSD25404Q3
SLPS570 â NOVEMBER 2015
GATE
DRAIN
Max RθJA = 55°C/W
when mounted on
1 inch2 of 2 oz. Cu.
SOURCE
M0137-01
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
GATE
DRAIN
www.ti.com
Max RθJA = 160°C/W
when mounted on
minimum pad area of
2 oz. Cu.
SOURCE
M0137-02
Figure 1. Transient Thermal Impedance
4
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