CSD17312Q5_11 Datasheet, PDF (4/11 Pages) Texas Instruments – 30V N-Channel NexFET™ Power MOSFET

CSD17312Q5
SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
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TYPICAL MOSFET CHARACTERISTICS (continued)
(T_A = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
100
90
V_GS = 2.5V
80
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100
90 ^{VDS = 5V}
80
70
V_GS = 3V
60
50
V_GS = 3.5V
40
V_GS = 4.5V
30
70
T_C = 125°C
60
50
T_C = 25°C
40
30
T_C = -55°C
20
V_GS = 8V
20
10
10
0
0
0.1
0.2
0.3
0.4
0.5
V_DS - Drain-to-Source Voltage - V
G001
Figure 2. Saturation Characteristics
0
0
0.5
1
1.5
2
2.5
V_GS - Gate-to-Source Voltage - V
Figure 3. Transfer Characteristics
3
G002
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8
7
I_D = 35A
V_DS = 15V
6
5
4
3
2
1
0
0
10
20
30
40
Q_g - Gate Charge - nC
Figure 4. Gate Charge
50
G003
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12
f = 1MHz
10
V_GS = 0V
8
C_oss = C_ds + C_gd
6
4
2 ^{Crss = CGgd}
C_iss = C_gd + C_gsgs
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage - V
G004
Figure 5. Capacitance
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1.6
1.4
I_D = 250µA
1.2
1
0.8
0.6
0.4
0.2
0
-75
-25
25
75
125
175
T_C - Case Temperature - °C
G005
Figure 6. Threshold Voltage vs. Temperature
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4
3.5
I_D = 35A
3
T_C = 125°C
2.5
2
1.5
1
T_C = 25°C
0.5
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage - V
G006
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
4
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