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| CD4066B-Q1_14 Datasheet, PDF (4/17 Pages) Texas Instruments – CMOS QUAD BILATERAL SWITCH | |||
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CD4066B-Q1
SCHS383 â APRIL 2011
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIN
VDD
(V) (V)
0.5
5
IDD Quiescent device current
0.10 10
0.15 15
0.20 20
SIGNAL INPUTS (Vis) AND OUTPUTS (Vos)
VC = VDD, RL = 10 kΩ returned
5
ron
On-state resistance (max)
to VDD VSS
Vis = VSS 2to VDD
,
10
15
On-state resistance
5
Îron difference between any two RL = 10 kΩ, VC = VDD
10
switches
15
THD Total harmonic distortion
VC = VDD = 5 V, VSS = â5 V,
Vis(p-p) = 5 V (sine wave centered on 0 V),
RL = 10 kΩ, fis = 1-kHz sine wave
3-dB cutoff frequency
(switch on)
VC = VDD = 5 V, VSS = â5 V, Vis(p-p) = 5 V
(sine wave centered on 0 V), RL = 1 kΩ
â50-dB feedthrough
frequency (switch off)
VC = VSS = â5 V, Vis(p-p) = 5 V
(sine wave centered on 0 V), RL = 1 kΩ
Iis
Input/output leakage current VC = 0 V, Vis = 18 V, Vos = 0 V; and VC = 0 V,
(switch off) (max)
Vis = 0 V, Vos = 18 V
18
â50-dB crosstalk frequency
VC(A) = VDD = 5 V,
VC(B) = VSS = -5 V,
Vis(A) = 5 Vp-p, 50-Ω source, RL = 1 kΩ
tpd
Propagation delay (signal
input to signal output)
RL = 200 kΩ, VC = VDD, VSS = GND,
CL = 50 pF, Vis = 10 V
5
10
(square wave centered on 5 V), tr, tf = 20 ns
15
Cis Input capacitance
Cos Output capacitance
Cios Feedthrough
VDD = 5 V, VC = VSS = â5 V
VDD = 5 V, VC = VSS = â5 V
VDD = 5 V, VC = VSS = â5 V
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LIMITS AT INDICATED TEMPERATURES
â40°C
125°C
25°C
TYP MAX
0.25
7.5
0.01 0.25
0.5
15
0.01 0.5
1
30
0.01
1
5
150
0.02
5
UNIT
µA
850
1300
470 1050
330
550
180 400 Ω
210
320
125 240
15
10
Ω
5
0.4%
±0.1
40
MHz
1
MHz
±1
±10-5 ±0.1 µA
8
MHz
20 40
10 20 ns
7 15
8
pF
8
pF
0.5
pF
4
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Product Folder Link(s) :CD4066B-Q1
Copyright © 2011, Texas Instruments Incorporated
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