AMC1301-Q1 Datasheet, PDF (4/34 Pages) Texas Instruments – Precision, 250-mV Input, Delay, Reinforced Isolated Amplifier

AMC1301-Q1
SBAS792A – APRIL 2017 – REVISED APRIL 2017
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6 Specifications
6.1 Absolute Maximum Ratings⁽¹⁾
MIN
MAX
UNIT
Supply voltage, VDD1 to GND1 or VDD2 to GND2
–0.3
7
V
Analog input voltage at VINP, VINN
GND1 – 6
VDD1 + 0.5
V
Input current to any pin except supply pins
–10
10
mA
Junction temperature, T_J
Storage temperature, T_stg
150
°C
–65
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
V_(ESD) Electrostatic discharge
Human body model (HBM), per AEC Q100-002⁽¹⁾
Charged device model (CDM), per AEC Q100-011
VALUE
±2000
±1000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
6.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
VDD1
VDD2
T_A
High-side supply voltage (VDD1 to GND1)
Low-side supply voltage (VDD2 to GND2)
Operating ambient temperature
MIN
NOM
MAX
UNIT
3.0
5.0
5.5
V
3.0
3.3
5.5
V
–40
125
°C
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
AMC1301-Q1
DWV (SOIC)
UNIT
8 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
110.1
51.7
66.4
16.0
64.5
N/A
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics, SPRA953.
6.5 Power Ratings
PARAMETER
P_D
Maximum power dissipation (both sides)
P_D1
Maximum power dissipation (high-side supply)
P_D2
Maximum power dissipation (low-side supply)
TEST CONDITIONS
VDD1 = VDD2 = 5.5 V
VALUE
81.4
45.65
35.75
UNIT
mW
mW
mW
4
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