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TPS65166 Datasheet, PDF (3/41 Pages) Texas Instruments – Compact LCD Bias Supply for TFT-LCD TV Panels
TPS65166
www.ti.com.......................................................................................................................................................................................... SLVS976 – SEPTEMBER 2009
ELECTRICAL CHARACTERISTICS
AVIN=VIN1=VIN2=VIN3=12V, EN1=EN2=VIN, VS=15V, Vlogic=3.3V, TA = –40°C to 85°C, typical values are at TA = 25°C
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
SUPPLY CURRENT
VIN
IQIN
Isd
VUVLO
VUVLO
Input voltage range
Quiescent current into AVIN, VIN1,2,3
Shutdown current into AVIN, VIN1,2,3
Under-voltage lockout threshold
Under-voltage lockout threshold
Thermal shutdown
Not switching, FB=FB+5%
EN1=EN2=GND
VIN falling
VIN rising
Temperature rising
Thermal shutdown hysteresis
LOGIC SIGNALS EN1, EN2, HVS
VIH
High level input voltage
VIL
Low level input voltage
II
Input leakage current
POWER GOOD
VIL
Low level voltage(1)
Ilkg
Leakage current
SEQUENCING DLY1, DLY2, and SOFT-START
VIN = 8.5V to 14.7V
VIN = 8.5V to 14.7V
EN1=EN2=GND
I(sink) = 500µA
VPG = 5.0V
Ichrg
DLY1, DLY2 charge current
Vthreshold DLY1, DLY2 threshold voltage
Rdischrg
DLY1, DLY2 discharge resistor
ISS
Soft-start charge current
SWITCHING FREQUENCY
Vthreshold = 1.24V
Vthreshold = 1.24V
fs
Switching frequency
BOOST CONVERTER (Vs)
Vs
Output voltage range
Vswovp
Switch overvoltage protection
Vs rising
VFB1
Feedback regulation voltage
IFB1
Feedback input bias current
VFB1 = 1.24V
RDS(on)
N-MOSFET on-resistance
ISW = 500mA
ILIM
N-MOSFET switch current limit
Ileak
Switch leakage current
Vsw = 15V
ton
Minimum on time
Line regulation
8.5V ≤ VIN ≤ 14.7V, Iout = 1mA
Load regulation
1mA ≤ Iout ≤ 2.0A
GATE DRIVE (GD) AND BOOST CONVERTER PROTECTION
VGDM
VIN – VGD (2)
VIN = 12V, GD pulled down
I(GD)
Gate drive sink current
EN2 = high
R(GD)
Gate drive internal pull up resistance
ton
Gate on time during short circuit
FB1 < 100mV
BUCK CONVERTER (Vlogic)
Vlogic
Output voltage range
VFB2
Feedback regulation voltage
FB2 connected to resistor divider,
Iload = 10mA
IFB2
Feedback input bias current
VFB2 = 1.24V
RDS(on)
N-MOSFET on-resistance
Isw3, Isw4 = 1.5A
MIN TYP MAX UNIT
8.5
14.7 V
1.2
mA
170
µA
8.0
8.2 V
8.2
8.5 V
150
°C
15
°C
1.7
0.01
V
0.4 V
0.1 µA
0.3 V
0.01
0.1 µA
4
4.9
6.3 µA
1.21 1.24 1.27 V
3.2
kΩ
8
10
12 µA
600
750
900 kHz
19.0
1.225
4.2
19.5
1.24
10
120
5.2
1
80
0.006
0.1
19 V
20 V
1.252 V
100 nA
170 mΩ
6.2 A
10 µA
ns
%/V
%/A
5
6
10
10
1.4
7V
µA
kΩ
ms
2.2
1.215
4.0 V
1.24 1.265 V
10
100 nA
150
250 mΩ
(1) PG goes high impedance once Vs and VONE are in regulation.
(2) GD goes to VIN – VGD once the boost converter Vs is enabled.
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TPS65166
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