TPS2062-1_14 Datasheet, PDF (3/32 Pages) Texas Instruments – CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

TPS2062-1
TPS2065-1
TPS2066-1
www.ti.com................................................................................................................................................ SLVS714A – FEBRUARY 2007 – REVISED MARCH 2009
DISSIPATING RATING TABLE
PACKAGE
D-8
DGN-8
T_A ≤ 25°C
POWER RATING
585.82 mW
1712.3 mW
DERATING FACTOR
ABOVE T_A = 25°C
5.8582 mW/°C
17.123 mW/°C
T_A = 70°C
POWER RATING
322.20 mW
941.78 mW
T_A = 85°C
POWER RATING
234.32 mW
684.33 mW
RECOMMENDED OPERATING CONDITIONS
Input voltage, V_I(IN)
Input voltage, V_I(EN), V_I(EN), V_I(ENx), V_I(ENx)
Continuous output current, I_O(OUT), I_O(OUTx)
Steady state current through discharge. Device disabled, measured through output pin(s)
Operating virtual junction temperature, T_J
MIN
MAX
UNIT
2.7
5.5
V
0
5.5
V
0
1
A
8
mA
-40
125
°C
ELECTRICAL CHARACTERISTICS
over recommended operating junction temperature range, V_I(IN) = 5.5 V, I_O = 1 A, V_I(/ENx) = 0 V, or V_I(ENx) = 5.5 V (unless
otherwise noted)
PARAMETER
POWER SWITCH
r_DS(on)
Static drain-source on-state resistance,
5-V operation and 3.3-V operation
Static drain-source on-state resistance,
2.7-V operation ⁽²⁾
t_r ⁽²⁾
Rise time, output
t_f ⁽²⁾
Fall time, output
ENABLE INPUT EN OR EN
V_IH
High-level input voltage
V_IL
Low-level input voltage
I_I
t_on ⁽³⁾
t_off ⁽³⁾
Input current
Turnon time
Turnoff time
CURRENT LIMIT
I_OS
Short-circuit output current
I_{OC_TRIP(3)} Overcurrent trip threshold
SUPPLY CURRENT (TPS2065-1)
Supply current, low-level output
Supply current, high-level output
Reverse leakage current
SUPPLY CURRENT (TPS2062-1, TPS2066-1)
Supply current, low-level output
Supply current, high-level output
Reverse leakage current
TEST CONDITIONS⁽¹⁾
V_I(IN) = 5 V or 3.3 V, I_O = 1 A, –40°C ≤ T_J ≤ 125°C
V_I(IN) = 2.7 V, I_O = 1 A, -40°C ≤ T_J ≤ 125°C
V_I(IN) = 5.5 V
V_I(IN) = 2.7 V
V_I(IN) = 5.5 V
V_I(IN) = 2.7 V
C_L = 1 µF, R_L = 5 Ω,
T_J = 25°C
2.7 V ≤ V_I(IN) ≤5.5 V
2.7 V ≤ V_I(IN) ≤ 5.5 V
V_I(ENx) = 0 V or 5.5 V, V_I(ENx) = 0 V or 5.5 V
C_L = 100 µF, R_L = 5 Ω
C_L = 100 µF, R_L = 5 Ω
V_I(IN) = 5 V, OUT connected to GND,
device enabled into short-circuit
T_J = 25°C
-40°C ≤ T_J ≤ 125°C
V_I(IN) = 5 V, current ramp (≤ 100 A/s) on OUT
No load on OUT, V_I(ENx) = 5.5 V,
or V_I(ENx) = 0 V
No load on OUT, V_I(ENx) = 0 V,
or V_I(ENx) = 5.5 V
V_I(OUTx) = 5.5 V, IN = ground⁽³⁾
T_J = 25°C
-40°C ≤ T_J ≤ 125°C
T_J = 25°C
-40°C ≤ T_J ≤ 125°C
T_J = 25°C
No load on OUT, V_I(ENx) = 5.5 V,
or V_I(ENx) = 0 V
No load on OUT, V_I(ENx) = 0 V,
or V_I(ENx) = 5.5 V
V_I(OUTx) = 5.5 V, IN = ground⁽³⁾
T_J = 25°C
-40°C ≤ T_J ≤ 125°C
T_J = 25°C
-40°C ≤ T_J ≤ 125°C
T_J = 25°C
MIN TYP MAX UNIT
70 135 mΩ
75 150 mΩ
0.6 1.5
0.4
1
ms
0.05
0.5
0.05
0.5
2
V
0.8
-0.5
0.5 µA
3
ms
10
1.1 1.5 1.9
A
1.1 1.5 2.1
2.4
3
A
0.5
1
µA
0.5 10
43 60
µA
43 70
0
µA
0.5
1
µA
0.5 20
50 70
µA
50 90
0.2
µA
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
(2) Not tested in production, specified by design.
(3) Not tested in production, specified by design.
Copyright © 2007–2009, Texas Instruments Incorporated
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