TL431-DIE Datasheet, PDF (3/6 Pages) Texas Instruments – PRECISION PROGRAMMABLE REFERENCE

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TL431-DIE
SLVSC48A – JULY 2013 – REVISED SEPTEMBER 2014
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
5 Bare Die Information
DIE THICKNESS
10.5 mils
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Anode
BOND PAD
METALLIZATION COMPOSITION
TiW/AlCu2%
BOND PAD THICKNESS
1629.9 nm
DESCRIPTION
CATHODE
N/C
mountpad
REF
Bon]d Pad Coordinates in Microns
PAD NUMBER
X MIN
Y MIN
1
783.59
841.248
2
169.926
841.248
3
22.86
22.86
4
771.398
107.66
X MAX
933.958
271.526
124.46
858.266
Y MAX
947.928
942.848
125.222
265.648
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