OPA4277-SP Datasheet, PDF (3/21 Pages) Texas Instruments – High-Precision Operational Amplifier

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5 Bare Die Information
OPA4277-SP
SBOS771 – DECEMBER 2016
DIE THICKNESS
15 mils
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Negative (lower) Power Supply
BOND PAD
METALLIZATION COMPOSITION
AlCu (0.5%)
BOND PAD
THICKNESS
990 to 1210 nm
Table 1. Bond Pad Coordinates in Microns⁽¹⁾
PAD
NO.
NAME
1
OUT A
2
–IN A
3
+IN A
4
V+
5
+IN B
6
–IN B
7
OUT B
8
OUT C
9
–IN C
10
+IN C
11
V–
12
+IN D
13
–IN D
14
OUT D
I/O
DESCRIPTION
O Output channel A.
I
Inverting input channel A.
I
Noninverting input channel A.
— Positive (higher) power supply.
I
Noninverting input channel B.
I
Inverting input channel B.
O Output channel B.
O Output channel C.
I
Inverting input channel C.
I
Noninverting input channel C.
— Negative (lower) power supply.
I
Noninverting input channel D.
I
Inverting input channel D.
O Output channel D.
X MIN
1791.042
1701.719
1701.719
1555.784
1706.752
1701.719
1796.074
3278.071
3362.361
3367.393
3407.651
3367.393
3362.361
3273.039
Y MIN
7290.340
6111.536
5326.505
4390.507
3462.057
2671.994
1498.222
1498.222
2671.994
3462.057
4391.765
5331.537
6111.536
7290.340
(1) Substrate must be biased to V–, negative (lower) power supply.
X MAX
1901.751
1807.397
1812.429
1661.461
1807.397
1807.397
1896.719
3383.748
3473.071
3473.071
3513.329
3468.038
3468.038
3383.748
Y MAX
7401.049
6217.213
5437.215
4498.700
3562.702
2777.671
1598.867
1603.900
2782.704
3567.734
4497.442
5432.182
6217.213
7401.049
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