LP2902 Datasheet, PDF (3/13 Pages) National Semiconductor (TI) – Micropower Quad Operational Amplifier

Absolute Maximum Ratings (Note 1)
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please contact the National Semiconductor Sales Office/
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Supply Voltage
LP324
LP2902
Differential Input Voltage
LP324
LP2902
Input Voltage (Note 2)
LP324
LP2902
Output Short-Circuit to GND
(One Amplifier) (Note 3)
32V or ± 16V
26V or ± 13V
32V
26V
−0.3V to 32V
−0.3V to 26V
Continuous
V⁺ ≤ 15V and T_A = 25˚C
ESD Susceptibility (Note 10)
±500V
Operating Conditions
T_JMAX
θ_JA (Note 4)
MT Package
N Package
M Package
Operating Temp. Range
Storage Temp. Range
Soldering Information
Wave Soldering(10sec)
Convection or Infrared(20sec)
150˚C
154˚C/W
90˚C/W
140˚C/W
(Note 5)
−65˚C≤T_J≤ 150˚C
260˚C(lead temp.)
235˚C
Electrical Characteristics (Note 6)
Symbol
Parameter
Conditions
V_OS
Input Offset
Voltage
I_B
Input Bias Current
I_OS
Input Offset Current
A_VOL
CMRR
PSRR
I_S
Voltage Gain
Common Mode Rej.
Ratio
Power Supply Rej.
Ratio
Supply Current
R_L = 10k to GND
V⁺ = 30V
V⁺ = 30V, 0V ≤ V_CM
V_CM < V⁺− 1.5
V⁺ = 5V to 30V
R_L = ∞
V_O
Output Voltage
Swing
I_OUT
Output Source
Source Current
I_OUT
Sink
Output Sink Current
I_OUT
Sink
Output Sink Current
I_SOURCE Output Short to GND
I_L = 350µA to GND
V_CM = 0V
I_L = 350µA to V⁺
V_CM = 0V
V_O = 3V
V_IN (diff) = 1V
V_O = 1.5V
V_IN (diff) = 1V
V_O = 1.5V
V_CM = 0V
V_IN (diff) = 1V
I_SINK
Output Short to V⁺
V_IN (diff) = 1V
V_OS
Drift
I_OS
Drift
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LP2902 (Note 9)
LP324
Tested Design
Tested Design Units
Typ
Limit Limit
Typ
Limit Limit Limits
(Note 7) (Note 8)
(Note 7) (Note 8)
2
4
10
2
4
9
mV
(Max)
2
20
40
2
10
20
nA
(Max)
0.5
4
8
0.2
2
4
nA
(Max)
70
40
30
100
50
40
V/mV
(Min)
90
80
75
90
80
75
dB
(Min)
90
80
75
90
80
75
dB
(Min)
85
150
250
85
150
250
µA
(Max)
3.6
3.4 V⁺−1.9V 3.6
3.4 V⁺−1.9V V
(Min)
0.7
0.8
1.0
0.7
0.8
1.0
V
(Max)
10
7
4
10
7
4
mA
(Min)
5
4
3
5
4
3
mA
(Min)
4
2
1
4
2
1
mA
(Min)
20
25
35
20
25
35
mA
35
35
(Max)
15
30
45
15
30
45
mA
(Max)
10
10
µV/C˚
10
10
pA/C˚
2