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LMP7300_14 Datasheet, PDF (3/18 Pages) Texas Instruments – Micropower Precision Comparator and Precision Reference with Adjustable Hysteresis
LMP7300
www.ti.com
SNOSAT7F – AUGUST 2007 – REVISED MARCH 2013
2.7V Electrical Characteristics(1)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 2.7V, V− = 0V, and VCM = V+/2, RPULLUP = 100 kΩ, CLOAD
= 10 pF. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min (2)
Typ (3)
Max (2)
Units
IS
Supply Current
RPULLUP = Open
9
12
17
μA
Comparator
VOS
Input Offset Voltage
TCVOS
IB
Input Offset Average Drift
Input Bias Current(5)
VCM = V+/2 SOIC
VCM = V+/2 VSSOP
See (4)
|VID| < 2.5V
±0.07
±0.07
1.8
1.2
±0.75
±2
±1.0
±2.2
3
4
mV
mV
μV/°C
nA
IOS
CMRR
PSRR
Input Offset Current
Common Mode Rejection Ratio
Power Supply Rejection Ratio
1V < VCM < 2.7V
V+ = 2.7V to 12V
0.15
0.5
nA
80
100
dB
80
100
dB
VOL
Output Low Voltage
ILOAD = 10 mA
0.25
0.4
0.5
V
ILEAK
HCLIN
IHYS
Output Leakage Current
Hysteresis Control Voltage
Linearity
Hysteresis Leakage Current
Comparator Output in High State
0 < Ref-HYSTP,N < 25 mV
25 mV < Ref-HYSTP,N < 100 mV
1
pA
1.000
0.950
mV/V
1.2
3
4
nA
TPD
Propagation Delay
(High to Low)
Reference
Overdrive = 10 mV, CL = 10 pF
Overdrive = 100 mV, CL = 10 pF
12
17
μs
4.5
7.6
VO
Reference Voltage
SOIC
VSSOP
2.043
2.048
2.053
V
2.043
2.048
2.056
V
Line Regulation
Load Regulation
TCVREF/°C Temperature Coefficient
VN
Output Noise Voltage
VCC = 2.7V to 12V
IOUT = 0 to 1 mA
−40°C to 125°C
0.1 Hz to 10 Hz
10 Hz to 10 kHz
14
80
μV/V
0.2
0.5
mV/mA
55
ppm/°C
80
μVPP
100
μVRMS
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using
statistical quality control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes, by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
Copyright © 2007–2013, Texas Instruments Incorporated
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