CSD88539ND_16 Datasheet, PDF (3/13 Pages) Texas Instruments – Dual 60 V N-Channel NexFET Power MOSFETs

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4.3 Typical MOSFET Characteristics
(T_A = 25°C unless otherwise stated)
CSD88539ND
SLPS456 – FEBRUARY 2014
Figure 1. Transient Thermal Impedance
50
45
40
35
30
25
20
15
10
5
0
0
V_GS =10V
V_GS =8V
V_GS =6V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V_DS - Drain-to-Source Voltage (V)
G001
Figure 2. Saturation Characteristics
40
36 ^{VDS = 5V}
32
28
24
20
16
12
8
T_C = 125°C
4
T_C = 25°C
T_C = −55°C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
G001
Figure 3. Transfer Characteristics
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