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| CSD83325L_16 Datasheet, PDF (3/14 Pages) Texas Instruments – 12 V Dual N-Channel NexFET Power MOSFET | |||
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www.ti.com
CSD83325L
SLPS494A â NOVEMBER 2014 â REVISED JANUARY 2016
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVS1S2
IS1S2
IGSS
VGS(th)
Source-to-source voltage
Source-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
RS1S2(on) Source-to-source on-resistance
gÆs
Transconductance
DYNAMIC CHARACTERISTICS(1)
Ciss
Coss
Crss
Qg
Qgd
Qgs
Qg(th)
Qoss
td(on)
tr
td(off)
tÆ
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total (4.5 V)
Gate charge gate-to-drain
Gate charge gate-to-source
Gate charge at Vth
Output charge
Turn on delay time
Rise time
Turn off delay time
Fall time
TEST CONDITIONS
VGS = 0 V, IS = 250 μA
VGS = 0 V, VS1S2 = 9.6 V
VS1S2 = 0 V, VGS = 10 V
VS1S2 = VGS, IS = 250 μA
VGS = 2.5 V, IS = 5 A
VGS = 3.8 V, IS = 5 A
VGS = 4.5 V, IS = 5 A
VS1S2 = 1.2 V, IS = 5 A
VGS = 0 V, VS1S2 = 6 V, Æ = 1 MHz
VS1S2 = 6 V, IS = 5 A
VS1S2 = 6 V, VGS = 0 V
VS1S2 = 6 V, VGS = 4.5 V,
IS1S2 = 5 A, RG = 0 â¦
(1) Dynamic characteristics values specified are per single FET.
MIN TYP MAX UNIT
12
V
1 μA
10 µA
0.75 0.95 1.25 V
14.0 17.5 23.0 mâ¦
8.8 10.9 13.0 mâ¦
7.9 9.9 11.9 mâ¦
36
S
902 1170 pF
187 243 pF
111 144 pF
8.4 10.9 nC
1.9
nC
2.2
nC
0.6
nC
2.9
nC
205
ns
353
ns
711
ns
589
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJA
Junction-to-ambient thermal resistance(1)
Junction-to-ambient thermal resistance(2)
(1) Device mounted on FR4 material with minimum Cu mounting area.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
MIN TYP MAX UNIT
150
°C/W
55
Copyright © 2014â2016, Texas Instruments Incorporated
Product Folder Links: CSD83325L
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