CSD17522Q5A_11 Datasheet, PDF (3/12 Pages) Texas Instruments – The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

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GATE
Source
Max R_θJA = 51°C/W
when mounted on
1 inch² (6.45 cm²) of
2-oz. (0.071-mm thick)
Cu.
DRAIN
M0137-01
CSD17522Q5A
SLPS341A – JUNE 2011 – REVISED AUGUST 2011
GATE
Source
Max R_θJA = 125°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
M0137-02
TYPICAL MOSFET CHARACTERISTICS
(T_A = 25°C unless otherwise stated)
10
1
0.5
0.3
0.1 ^0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.001
0.01
Duty Cycle = t₁/t₂
P
t₁
t₂
Typical R_qJA = 100°C/W (min Cu)
T_J = P ´ Z_qJA ´ R_qJA
0.1
1
10
100
1k
t_p - Pulse Duration - s
G012
Figure 2. Transient Thermal Impedance
Copyright © 2011, Texas Instruments Incorporated
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