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BQ27X00-TESTER Datasheet, PDF (3/33 Pages) Texas Instruments – SINGLE CELL Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS (bqJUNIOR)
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RECOMMENDED OPERATING CONDITIONS
VCC Supply voltage
TA
Operating free-air temperature
Input voltage, SRP and SRN with respect to VSS
bq27000, bq27200
SLUS556D – SEPTEMBER 2004 – REVISED MARCH 2006
MIN
2.6
–20
–100
MAX
4.5
70
100
UNIT
V
°C
mV
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range and supply voltage range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
GENERAL
ICC(VCC)
ICC(SLP)
ICC(SHP)
ICC(POR)
V(POR)
Active current
Sleep current
Ship current (bq27000 only)
Hibernate current
RBI current
POR threshold
Input impedance
0 < VCC < 1.5 V
RBI pin only, VCC <
VCC(POR)
BAT, SRN, SRP
Pull-down current
HDQ, SCL, SDA
HDQ, SCL, SDA and GPIO
VIH
High-level input voltage
VIL
Low-level input voltage
Low-level output voltage (GPIO)
VOL
Low-level output voltage (HDQ, SCL, SDA)
VOLTAGE AND TEMPERATURE MEASUREMENT
VCC < 4.2 V
VCC > 4.2 V
IOL = 1 mA
IOL = 2 mA
Measurement range
Reported voltage resolution
VCC = V(BAT)
Reported accuacy
Voltage update time
Reported temperature resolution
Reported temperature accuracy
Temperature update time
VSRP-VSRN differential input
TIME, CURRENT AND CAPACITY (3.0 V ≤ VCC≤ 4.2 V, 0°C ≤ TA≤ 50°C)
fOSC
Internal oscillator frequency
Current gain variability
Coulometric gain variability
Coulomb counter input offset(1)
EEPROM PROGRAMMING ( VCC≥ 3.0 V, -20°C ≤ TA≤ 35°C)(2)
Programming voltage rise time
Programming voltage high time
Programming voltage fall time
Programming voltage
Applied to PGM pin
EEPROM programming current
VPROGRAM = 21 V
MIN
TYP
52
1.0
0.9
0.6
<1
2.0
10
2.7
1.5
1.7
2.6
2.7
-25
2.56
0.25
-3
2.56
–100
-2.2%
-0.5%
-1.7%
-15
0
0.5
10
0.5
20
(1) Excludes contributions to the offset due to PCB layout or other factors external to the bq27000/bq27200.
(2) Maximum number of programming cycles on the EEPROM is 10 and data retention time is 10 years at TA = 85°C.
MAX UNIT
90
2.5
µA
2.0
1.5
20 nA
2.6 V
MΩ
4.5 µA
0.7 V
0.4
0.4
4.5 V
mV
25
s
°K
3
s
100 mV
1.5%
0.5%
0.5%
15 µV
1.5 ms
100 ms
1.5 ms
22 V
15 mA
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