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BQ24314EVM Datasheet, PDF (3/26 Pages) Texas Instruments – OVERVOLTAGE AND OVERCURRENT PROTECTION IC
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bq24314
bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS
over junction temperature range 0°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IN
VUVLO
Under-voltage lock-out, input
power detected threshold
CE = Low, VIN increasing from 0V to 3V
2.6 2.7 2.8 V
VHYS-UVLO Hysteresis on UVLO
TDGL(PGOOD)
Deglitch time, input power
detected status
CE = Low, VIN decreasing from 3V to 0V
CE = Low. Time measured from VIN 0V → 5V 1μs rise-time,
to output turning ON
200 260 300 mV
8
ms
IDD
Operating current
ISTDBY
Standby current
INPUT TO OUTPUT CHARACTERISTICS
CE = Low, No load on OUT pin,
VIN = 5V, RILIM = 25kΩ
CE = High, VIN = 5.0V
400 600 μA
65 95 μA
VDO
Drop-out voltage IN to OUT
INPUT OVERVOLTAGE PROTECTION
CE = Low, VIN = 5V, IOUT = 1A
170 280 mV
VOVP
tPD(OVP)
VHYS-OVP
tON(OVP)
Input overvoltage
protection
threshold
bq24314
bq24316
Input OV propagation delay(1)
Hysteresis on OVP
Recovery time from input
overvoltage condition
INPUT OVERCURRENT PROTECTION
CE = Low, VIN increasing from 5V to 7.5V
CE = Low
CE = Low, VIN decreasing from 7.5V to 5V
CE = Low, Time measured from
VIN 7.5V → 5V, 1μs fall-time
5.71 5.85 6.00 V
6.60 6.80 7.00 V
1 μs
25 60 110 mV
8
ms
IOCP
Input overcurrent protection
threshold range
IOCP
Input overcurrent protection
threshold
CE = Low, RILIM = 25kΩ
300
1500 mA
930 1000 1070 mA
tBLANK(OCP)
Blanking time, input overcurrent
detected
176
μs
tREC(OCP)
Recovery time from input
overcurrent condition
64
ms
BATTERY OVERVOLTAGE PROTECTION
BVOVP
Battery overvoltage protection
threshold
CE = Low, VIN > 4.4V
4.30 4.35 4.4 V
VHYS-BOVP
IVBAT
Hysteresis on BVOVP
Input bias current
on VBAT pin
DSG
Package
DSJ
Package
CE = Low, VIN > 4.4V
VBAT = 4.4V, TJ = 25°C
VBAT = 4.4V, TJ = 85°C
200 275 320 mV
10
nA
10
TDGL(BOVP)
Deglitch time, battery overvoltage CE = Low, VIN > 4.4V. Time measured from VVBAT rising from
detected
4.1V to 4.4V to FAULT going low.
176
μs
THERMAL PROTECTION
TJ(OFF)
Thermal shutdown temperature
TJ(OFF-HYS) Thermal shutdown hysteresis
LOGIC LEVELS ON CE
140 150 °C
20
°C
VIL
Low-level input voltage
VIH
High-level input voltage
IIL
Low-level input current
IIH
High-level input current
LOGIC LEVELS ON FAULT
VCE = 0V
VCE = 1.8V
0
0.4 V
1.4
V
1 μA
15 μA
VOL
Output low voltage
ISINK = 5mA
IHI-Z
Leakage current, FAULT pin HI-Z VFAULT = 5V
0.2 V
10 μA
(1) Not tested in production. Specified by design.
Copyright © 2007, Texas Instruments Incorporated
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