TMS29F002RB Datasheet, PDF (28/41 Pages) Texas Instruments – 262144 BY 8-BIT FLASH MEMORIES

TMS29F002RT, TMS29F002RB
262ā144 BY 8ĆBIT
FLASH MEMORIES
SMJS849B − MARCH 1997 − REVISED JUNE 1998
switching characteristics over recommended ranges of supply voltage and ambient temperature,
controlled by CE (see Figure 14)
PARAMETER
tc(W)
Cycle time, write
Cycle time, sector-erase
operation
ALTERNATE
SYMBOL
tAVAV
tEHEH2
’29F002R-90
MIN TYP MAX
90
1
’29F002R-100
MIN TYP MAX
100
1
’29F002R-120
MIN TYP MAX
120
UNIT
ns
1
s
Cycle time, chip-erase
operation
th(A)
th(D)
th(W)
th(C)
Hold time, address
Hold time, data
Hold time, WE
Hold time, OE read
Hold time, OE toggle, data
tw(EL) Pulse duration, CE low
tw(EH) Pulse duration, CE high
Recovery time, read before
trec(R) _write
tsu(A) Setup time, address
tsu(D) Setup time, data
tsu(W) Setup time, WE
Setup time, OE
Programming operation
tEHEH3
tELAX
tEHDX
tEHWH
tEHGL1
tEHGL2
tELEH1
tEHEL
tGHEL
tAVE_L
tDVEH
tWLEL
tGLEL
tEHEH1
7 60
7 60
7 60 s
45
50
50
ns
45
50
50
ns
0
0
0
ns
0
0
0
ns
10
10
10
ns
45
45
45
ns
20
20
20
ns
0
0
0
ns
0
45
0
0
7
0
50
0
0
7
0
ns
50
ns
0
ns
0
ns
7
µs
28
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