TMS28F008AEB Datasheet, PDF (21/52 Pages) Texas Instruments – 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES

TMS28F008Axy,TMS28F800Axy
1Ă048Ă576 BY 8ĆBIT/524Ă288 BY 16ĆBIT
AUTOĆSELECT BOOTĆBLOCK FLASH MEMORIES
SMJS851A − NOVEMBER 1997 − REVISED MARCH 1998
Start
Issue Program-Setup
Command and Byte Address
Issue Byte
Address/Data
Read Status-Register
Bits
SB7 = 1
No
?
Yes
Full Status-Register
Check (optional)
See Note A
Byte-Program Completed
BUS
OPERATION
COMMAND
COMMENTS
Write
Write
program
setup
Data = 40h or 10h
Addr = Address of
byte to be
programmed
Write
Read
Write data
Data = Byte to be
programmed
Addr = Address of
byte to be
programmed
Status-register data.
Toggle OE or CE to up-
date status register
Standby
Check SB7
1 = Ready, 0 = Busy
Repeat for subsequent bytes.
Write FFh after the last byte-programming operation to
reset the device to read-array mode
FULL STATUS-REGISTER-CHECK FLOW
Read
Status-Register Bits
SB3 = 0
No
?
Yes
SB4 = 0
No
?
Yes
Byte-Program Passed
VPP Range Error
Byte-Program
Failed
BUS
OPERATION ^COMMAND
COMMENTS
Standby
Check SB3
1 = Detect VPP low
(see Note B)
Standby
Check SB4
1 = Byte-program error
(see Note C)
NOTES: A. Full status-register check can be done after each byte or after a sequence of bytes.
B. SB3 must be cleared before attempting additional program/erase operations.
C. SB4 is cleared only by the clear-status-register command, but it does not prevent additional program operation attempts.
Figure 3. Automated Byte-Programming Flow Chart
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