TLC555-DIE Datasheet, PDF (2/5 Pages) Texas Instruments – LinCMOS™ TIMER

TLC555-DIE
SLFS079 – JULY 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
11 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
TiW/AlSi (1%)Cu (0.5%)
BOND PAD
THICKNESS
760 nm
2
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