TLC2252-DIE Datasheet, PDF (2/6 Pages) Texas Instruments – ADVANCED LinCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIER

TLC2252-DIE
SLOS819 – JANUARY 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
10.5 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
AlCuTiW
BOND PAD
THICKNESS
1540 nm
2
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