THS3001-DIE Datasheet, PDF (2/4 Pages) Texas Instruments – 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER

THS3001-DIE
SLOS812 – AUGUST 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
DIE THICKNESS
10.5 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
TiW/AlSi(1%)Cu(0.5%)
BOND PAD
THICKNESS
1820 nm
DESCRIPTION
IN-
IN+
VCC-
OUT
VCC+
Table 1. Bond Pad Coordinates in Microns
PAD NUMBER
1
2
3
4
5
X MIN
128.4
128.4
209.25
956.2
1022.7
Y MIN
587
327.4
94.9
385.85
692.5
X MAX
230
230
310.85
1057.8
1124.3
Y MAX
688.6
429
196.5
487.45
794.1
2
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