TC285SPD-30 Datasheet, PDF (2/30 Pages) Texas Instruments – Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain

TC285SPD-B0
1004 x 1002 PIXEL IMPACTRON^TM CCD IMAGE SENSOR
SOCS093 – JANUARY 2006
the charge domain before conversion to voltage. The charge carrier multiplication (CCM)
is achieved by using a low-noise single-carrier, impact ionization process that occurs
during repeated carrier transfers through high field regions. Applying multiplication
pulses to specially designed gates activates the CCM. The amount of multiplication gain
is adjustable depending on the amplitude of multiplication pulses. The device function
resembles the function of an image intensifier implemented in solid state.
The image-sensing area of the TC285SPD is configured into 1002 lines with 1004 pixels
in each line. 28 pixels are reserved in each line for dark reference. The blooming
protection is based on an advanced lateral overflow drain concept that does not reduce
NIR response. The sensor can be operated in the progressive scan mode and can capture a
full 1,006,008 pixels in one image field. The frame transfer from the image sensing area
to the memory area is accomplished at a high rate that minimizes image smear. The
electronic exposure control is achieved by clearing the unwanted charge from the image
area using a short positive pulse applied to the anti-blooming drain. This marks the
beginning of the integration time, which can be arbitrarily shortened from its nominal
length. After charge is integrated and stored in the memory it is available for readout in
the next cycle. This is accomplished by using a unique serial register design that includes
special charge multiplication pixels.
The TC285SPD sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase
CCD (SGVPCCD) technology, which provides devices with wide spectral response, high
quantum efficiency (QE), low dark current, and high response uniformity.
This MOS device contains limited built-in ESD protection. During storage or handling, the device
leads should be shorted together or the device should be placed in conductive foam. In a circuit,
unused inputs should always be connected to Vss. Under no circumstances should pin voltages
exceed absolute maximum ratings. Avoid shorting OUT to Vss during operation to prevent
damage to the amplifier. The device can also be damaged if the output and ADB terminals are
reverse-biased and excessive current is allowed to flow. Specific guidelines for handling devices
of this type are contained in the publication “Guidelines for Handling Electrostatic-Discharge-
Sensitive (ESD) Devices and Assemblies” available from Texas Instruments.
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