TC281_03 Datasheet, PDF (2/18 Pages) Texas Instruments – PIXEL CCD IMAGE SENSOR

TC281
1036- × 1010-PIXEL CCD IMAGE SENSOR
SOCS058D – JUNE 1996 – REVISED MARCH 2003
description (continued)
The blooming protection of the sensor is based on an advanced lateral overflow drain (ALOD). The antiblooming
function is activated when a suitable dc bias is applied to the overflow drain pin. With this type of blooming
protection it is also possible to clear the image area of charge completely. This is accomplished by providing
a single 10-V pulse of at least 1 µs duration to the overflow drain pin.
The TC281 image sensor uses TI-proprietary advanced virtual-phase (AVP) technology, the advanced lateral
overflow drain, and the BCD detection node. These features provide the TI image sensing devices with a high
blue response, high near-IR sensitivity, low dark current, high photoresponse uniformity, and single-phase
clocking. The TC281 is characterized for operation from -10_C to 45_C.
functional block diagram
2
ODB
3
IAG
Top Drain
Image Area
21 _TDB
20 _IAG
6
SAG
VSOURCE ¹³
9
ADB
8
OUT
12
RST ₁₁
Vgate
Amplifier
Storage Area
Serial Register
and Transfer Gate
10
CDB
Clearing Drain
5 _SAG
15 _SRG
14 _TRG
2
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