OP-07 Datasheet, PDF (2/8 Pages) National Semiconductor (TI) – Low Offset, Low Drift Operational Amplifier

December 1994
OP-07 Low Offset Low Drift Operational Amplifier
General Description
Features
The OP-07 has very low input offset voltage which is ob- ^Y Low VOS
75 mV Max
tained by trimming at the wafer stage These low offset volt- ^Y Low V_OS Drift
0 6 mV C Max
ages generally eliminate any need for external nulling The Y _{Ultra-Stable vs Time}
1 0 mV Month Max
OP-07 also features low input bias current and high open- Y _{Low Noise}
0 6 mVp-p Max
loop gain The low offsets and high open-loop gain make _{Y Wide Input Voltage Range}
g14V
the OP-07 particularly useful for high-gain applications
Y _{Wide Supply Voltage Range}
g3V to g18V
The wide input voltage range of g13V minimum combined _{Y Fits 725 108A 308A 741 AD510 Sockets}
with high CMRR of 110 dB and high input impedance pro-
vide high accuracy in the non-inverting circuit configuration
Excellent linearity and gain accuracy can be maintained
even at high closed-loop gains
Stability of offsets and gain with time or variation in temper-
ature is excellent
The OP-07 is available in TO-99 metal can ceramic or
molded DIP
te ^{For improved specifications see the LM607}
Y _{Replaces the mA714}
Applications
Y _{Strain Gauge Amplifiers}
Y _{Thermocouple Amplifiers}
Y _{Precision Reference Buffer}
Y _{Analog Computing Functions}
Connection Diagram
Dual-In-Line Package
le _{See NS Package Number N08E}
TL H 10550 – 1
o _{Ordering Information}
T_A e 25 C
sVOSMax
(mV)
N08E
Plastic
75
OP07EP
150
OP07CP
b₁₅₀
OP07DP
O^{Also available per SMD 8203602}
Operating
Temperature
Range
COM
COM
COM
C1995 National Semiconductor Corporation TL H 10550
RRD-B30M115 Printed in U S A