LM3557 Datasheet, PDF (2/19 Pages) National Semiconductor (TI) – Step-Up Converter for White LED Applications

LM3557
SNVS338B – NOVEMBER 2004 – REVISED FEBRUARY 2013
Connection Diagram
www.ti.com
1
8
2
7
3
6
4
5
Figure 2. 8-Lead Thin WSON Package
(Top View)
Name
Sw1
V_IN
NC
En
Ovp
Fb
Sw2
Gnd
DAP
Pin No.
1
2
3
4
5
6
7
8
DAP
PIN DESCRIPTIONS
Description
Drain Connection of the Internal Power Field Effect Transistor (FET) Switch (Figure 3: N1)
Input Voltage Connection
No Connection
Device Enable Connection
Over-Voltage Protection Input Connection
Feedback Voltage Connection
Drain Connection of an Internal Field Effect Transistor (FET) Switch (Figure 3: N2)
Ground Connection
Die Attach Pad (DAP), must be soldered to the printed circuit board's ground plane for enhanced thermal dissipation
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings ⁽¹⁾⁽²⁾
V_IN Pin
En Pin
Fb Pin
Sw2 Pin
Ovp Pin
Sw1 Pin
Continuous Power Dissipation
Maximum Junction Temperature
(T_J-MAX)
Storage Temperature Range
ESD Rating ⁽³⁾
Human Body Model
Machine Model
−0.3V to +8V
−0.3V to +8V
−0.3V to +8V
−0.3V to +8V
−0.3V to +30V
−0.3V to +40V
Internally Limited
+150°C
−65°C to +150°C
2 kV
150V
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical characteristic specifications do not
apply when operating the device outside of its rated operating conditions.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office / Distributors for
availability and specifications.
(3) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200 pF
capacitor discharged directly into each pin.
2
Submit Documentation Feedback
Product Folder Links: LM3557
Copyright © 2004–2013, Texas Instruments Incorporated