CSD18504Q5A_12 Datasheet, PDF (2/12 Pages) Texas Instruments – The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

CSD18504Q5A
SLPS366B – JUNE 2012 – REVISED NOVEMBER 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
BV_DSS
I_DSS
I_GSS
V_GS(th)
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
R_DS(on) Drain to Source On Resistance
g_fs
Transconductance
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_G
Series Gate Resistance
Q_g
Gate Charge Total (4.5V)
Q_g
Gate Charge Total (10V)
Q_gd
Gate Charge Gate to Drain
Q_gs
Gate Charge Gate to Source
Q_g(th)
Gate Charge at Vth
Q_oss
Output Charge
t_d(on)
Turn On Delay Time
t_r
Rise Time
t_d(off)
Turn Off Delay Time
t_f
Fall Time
Diode Characteristics
V_SD
Diode Forward Voltage
Q_rr
Reverse Recovery Charge
t_rr
Reverse Recovery Time
TEST CONDITIONS
V_GS = 0V, I_D = 250μA
V_GS = 0V, V_DS = 32V
V_DS = 0V, V_GS = 20V
V_DS = V_GS, I_D = 250μA
V_GS = 4.5V, I_D = 17A
V_GS = 10V, I_D = 17A
V_DS = 20V, I_D = 17A
V_GS = 0V, V_DS = 20V, f = 1MHz
V_DS = 20V, I_D = 17A
V_DS = 20V, V_GS = 0V
V_DS = 20V, V_GS = 10V,
I_DS = 17A, R_G = 0
I_SD = 17A, V_GS = 0V
V_DS= 20V, I_F = 17A,
di/dt = 300A/μs
MIN TYP MAX UNIT
40
V
1 μA
100 nA
1.5 1.9 2.4 V
7.5 9.8 mΩ
5.3 6.6 mΩ
71
S
1380 1656 pF
310 372 pF
8 9.6 pF
1.4 2.8 Ω
7.7 9.2 nC
16
19
2.4
nC
3.2
nC
2.2
nC
21
nC
3.2
ns
6.8
ns
12
ns
2
ns
0.8
1V
39
nC
28
ns
THERMAL CHARACTERISTICS
(T_A = 25°C unless otherwise stated)
PARAMETER
R_θJC
R_θJA
Thermal Resistance Junction to Case⁽¹⁾
Thermal Resistance Junction to Ambient⁽¹⁾⁽²⁾
MIN TYP MAX UNIT
2 °C/W
50 °C/W
(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.
2
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